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| PartNumber | SQJ840EP-T1_GE3 | SQJ844AEP-T1_GE3 | SQJ844EP-T1-GE3 |
| Description | MOSFET 30V 30A 46W AEC-Q101 Qualified | MOSFET N-Channel 30V AEC-Q101 Qualified | MOSFET 30V 8A 48W N-Ch Automotive |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | - |
| Number of Channels | 1 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 30 A | 8 A | - |
| Rds On Drain Source Resistance | 7.5 mOhms | 13.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 38 nC | 26 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 46 W | 48 W | - |
| Configuration | Single | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.04 mm | 1.04 mm | - |
| Length | 6.15 mm | 6.15 mm | - |
| Series | SQ | SQ | - |
| Transistor Type | 1 N-Channel | 2 N-Channel | - |
| Width | 5.13 mm | 5.13 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 38 S | 20 S | - |
| Fall Time | 17 ns | 7 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 10 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 28 ns | 20 ns | - |
| Typical Turn On Delay Time | 11 ns | 4.5 ns | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |