SQJ840EP-T1_GE3

Mfr. #:: SQJ840EP-T1_GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V 30A 46W AEC-Q101 Qualified
Lifecycle:: New from this manufacturer.
Datasheet:: SQJ840EP-T1_GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SQJ840EP-T1_GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-SO-8L-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 30 A

Rds On - Drain-Source Resistance:: 7.5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 38 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 46 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.04 mm

Length:: 6.15 mm

Series:: SQ

Transistor Type:: 1 N-Channel

Width:: 5.13 mm

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 38 S

Fall Time:: 17 ns

Product Type:: MOSFET

Rise Time:: 11 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 28 ns

Typical Turn-On Delay Time:: 11 ns

Unit Weight:: 0.017870 oz

Tags: SQJ84, SQJ8, SQJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQJ840EP-T1_GE3 Description

***ical: Trans MOSFET N-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

***ure Electronics: Single N-Channel 30 V 9.3 mOhm 46 W SMT Automotive Power Mosfet - PowerPAK SO-8L

***ark: MOSFET,N CHANNEL,W DIODE,30V,30A,POPAK8L

***ronik: N-CH 30V 30A 115mOhm PPSO-8L RoHSconf

*** Americas: N-CHANNEL 30-V (D-S) 175C MOSFET

***S: French Electronic Distributor since 1988

***nell: MOSFET,N CH,W DIODE,30V,30A,POPAK8L; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 46W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Voltage Vgs Max: 20V

***ure Electronics: Single N-Channel 30 V 8.7 mOhm 12 nC HEXFET® Power Mosfet - PQFN-5 x 6 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 14A, 8.7 MOHM, 8.1 NC QG, PQFN56

***ment14 APAC: MOSFET, N CH, 30V, 14A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***(Formerly Allied Electronics): SIRA18DP-T1-GE3 N-channel MOSFET Transistor; 15.5 A; 30 V; 8-Pin PowerPAK SO

***ure Electronics: Single N-Channel 30 V 15.5 A 3.3 W Surface Mount Mosfet - POWERPAK-SO-8

***nell: MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

***(Formerly Allied Electronics): MOSFET, 30V, 15A, 8.5 MOHM, 9.3 NC QG, PQFN56

***et: Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:15A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):8.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N CH, 30V, 15A, PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:34A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V

***emi: PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ

***ure Electronics: N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA

*** Stop Electro: Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

***nell: MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***emi: Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK

***Yang: Trans MOSFET N-CH 25V 32A 3-Pin(2+Tab) DPAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: MOSFETs- Power and Small Signal 25V 75A N-Channel

***ment14 APAC: N CHANNEL MOSFET, 25V, 75A, D-PAK

***emi: Asymmetric Dual N-Channel MOSFET, PowerTrench® Power Stage, 30V

***et: Transistor MOSFET Array Dual N-CH 30V 60A/148A 8-Pin Power 56 T/R

***ure Electronics: Trans MOSFET N-CH 30V 13A/27A 8-Pin Power 56 T/R - Tape and Reel

***nell: MOSFET, NN CH, ASYMMETRIC, 30V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

SQJ840EP-T1_GE3 More Information

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

Part #	Mfg.	Description	Stock	Price
SQJ840EP-T1_GE3 DISTI # SQJ840EP-T1_GE3-ND	Vishay Siliconix	MOSFET N-CH 30V 30A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.6909
SQJ840EP-T1_GE3 DISTI # SQJ840EP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ840EP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SQJ840EP-T1_GE3 DISTI # SQJ840EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ840EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.6019 18000:$0.6189 12000:$0.6359 6000:$0.6629 3000:$0.6839
SQJ840EP-T1_GE3 DISTI # SQJ840EP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R (Alt: SQJ840EP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.6759 18000:€0.7069 12000:€0.7999 6000:€0.9859 3000:€1.3749
SQJ840EP-T1_GE3 DISTI # 78-SQJ840EP-T1_GE3	Vishay Intertechnologies	MOSFET 30V 30A 46W AEC-Q101 Qualified RoHS: Compliant	3000	1:$1.6400 10:$1.3500 100:$1.0300 500:$0.8930 1000:$0.7040 3000:$0.6570 6000:$0.6250 9000:$0.6110
SQJ840EP-T1-GE3 DISTI # 78-SQJ840EP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ840EP-T1_GE3 RoHS: Compliant	0
SQJ840EP-T1_GE3	Vishay Intertechnologies		2990
SQJ840EP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ840EP-T1_GE3 RoHS: Compliant	Americas -

Image	Part #	Description
	Mfr.#: SQJ840EP-T1_GE3 OMO.#: OMO-SQJ840EP-T1-GE3-286	MOSFET 30V 30A 46W AEC-Q101 Qualified
	Mfr.#: SQJ840EP-T1-GE3 OMO.#: OMO-SQJ840EP-T1-GE3-4B8	MOSFET RECOMMENDED ALT 78-SQJ840EP-T1_GE3
	Mfr.#: SQJ840EP-T1-GE3 OMO.#: OMO-SQJ840EP-T1-GE3-317	RF Bipolar Transistors MOSFET 30V 30A 46W N-Ch Automotive
	Mfr.#: SQJ840EP-T1_GE3 OMO.#: OMO-SQJ840EP-T1-GE3-VISHAY	MOSFET N-CH 30V 30A PPAK SO-8

SQJ840EP-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes