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SQJ840EP-T1_GE3

P1-P3P4-P6P7-P9P10-P12
SQJ840EP
www.vishay.com
Vishay Siliconix
S15-1878-Rev. C, 17-Aug-15
1
Document Number: 70325
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See Solder Profile (
www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) 30
R
DS(on)
(Ω) at V
GS
= 10 V 0.0093
R
DS(on)
(Ω) at V
GS
= 4.5 V 0.0138
I
D
(A) 30
Configuration Single
Package PowerPAK SO-8L
PowerPAK
®
SO-8L Single
2
S
3
S
4
G
1
S
D
Bottom View
1
6.15 mm
5.13 mm
Top View
D
G
SN-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
a
T
C
= 25 °C
I
D
30
A
T
C
= 125 °C 30
Continuous Source Current (Diode Conduction)
a
I
S
30
Pulsed Drain Current
b
I
DM
120
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
23
Single Pulse Avalanche Energy E
AS
26 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
46
W
T
C
= 125 °C 15
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
65
°C/W
Junction-to-Case (Drain) R
thJC
3.2
SQJ840EP
www.vishay.com
Vishay Siliconix
S15-1878-Rev. C, 17-Aug-15
2
Document Number: 70325
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 30 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.2 1.7 2.2
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 30 V - - 1
μA V
GS
= 0 V V
DS
= 30 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 30 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
≥ 5 V 30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 10.3 A - 0.0075 0.0093
Ω
V
GS
= 10 V I
D
= 10.3 A, T
J
= 125 °C - 0.0115 0.0150
V
GS
= 10 V I
D
= 10.3 A, T
J
= 175 °C - 0.0140 0.0170
V
GS
= 4.5 V I
D
= 8.7 A - 0.0110 0.0138
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 16 A - 38 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 15 V, f = 1 MHz
- 1550 1900
pF Output Capacitance C
oss
- 575 690
Reverse Transfer Capacitance C
rss
- 210 260
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 15 V, I
D
= 16.5 A
-25.338
nC Gate-Source Charge
c
Q
gs
-3.7-
Gate-Drain Charge
c
Q
gd
-5.4-
Gate Resistance R
g
f = 1 MHz 0.4 - 1.5 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 1 Ω
-1115
ns
Rise Time
c
t
r
-1115
Turn-Off Delay Time
c
t
d(off)
-2835
Fall Time
c
t
f
-1725
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--120A
Forward Voltage V
SD
I
F
= 10 A, V
GS
= 0 V - 0.8 1.2 V
SQJ840EP
www.vishay.com
Vishay Siliconix
S15-1878-Rev. C, 17-Aug-15
3
Document Number: 70325
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
0246810
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
V
GS
= 10 V thru 4 V
3 V
0
0 5 10 15 20 25
12
24
36
48
60
I
D
- Drain Current (A)
g
fs
- Transconductance (S)
T
C
= 125 °C
T
C
= 25 °C
T
C
= -55 °C
0
0102030
500
1000
1500
2000
2500
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
rss
C
iss
0
012345
8
16
24
32
40
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
T
C
= -55 °C
T
C
= 125 °C
T
C
= 25 °C
0
0 8 16 24 32 40
0.01
0.02
0.03
0.04
0.05
I
D
- Drain Current (A)
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
0
2
4
6
8
10
I
D
= 16.5 A
V
DS
= 15 V
0 5 10 15 20 25 30
P1-P3P4-P6P7-P9P10-P12

SQJ840EP-T1_GE3

Mfr. #:
Buy SQJ840EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 30A 46W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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