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SQJ840EP-T1_GE3

P1-P3P4-P6P7-P9P10-P12
SQJ840EP
www.vishay.com
Vishay Siliconix
S15-1878-Rev. C, 17-Aug-15
4
Document Number: 70325
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.5
-50 -25 25 75 1250 50 100 150 175
0.8
1.4
1.1
1.7
2.0
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 18 A
V
GS
= 10 V
0
021357964810
0.08
0.06
0.04
0.02
0.10
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
T
J
= 150 °C
T
J
= 25 °C
0.001
0.0 0.2 0.6 1.00.4 0.8 1.2
0.01
1
0.1
10
100
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
28
-50 -25 25 75 1250 50 100 175150
29
32
30
31
33
34
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA
SQJ840EP
www.vishay.com
Vishay Siliconix
S15-1878-Rev. C, 17-Aug-15
5
Document Number: 70325
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.01 0.1 1 10010
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
BVDSS Limited
T
C
= 25 °C
Single Pulse
1 ms
10 ms
100 ms, 1 s, 10 s, DC
Limited by R
DS(on)
*
I
DM
Limited
I
D
Limited
100 μs
10
-3
10
-2
000101110
-1
10
-4
100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Duty Cycle = 0.5
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Single Pulse
SQJ840EP
www.vishay.com
Vishay Siliconix
S15-1878-Rev. C, 17-Aug-15
6
Document Number: 70325
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70325
.
1
0.1
0.01
0.2
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.1
10
-3
10
-2
110
-1
10
-4
0.02
Single Pulse
0.05
Square Wave Pulse Duration (s)
P1-P3P4-P6P7-P9P10-P12

SQJ840EP-T1_GE3

Mfr. #:
Buy SQJ840EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 30A 46W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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