STD10NM65N vs STD10NM65N,10NM65N,10N65 vs STD10NM65N_08

 
PartNumberSTD10NM65NSTD10NM65N,10NM65N,10N65STD10NM65N_08
DescriptionMOSFET N-Channel 650V Power MDmesh
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance480 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation90 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.4 mm--
Length6.6 mm--
SeriesSTP10NM65N--
Transistor Type1 N-Channel--
Width6.2 mm--
BrandSTMicroelectronics--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.139332 oz--
Top