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STD10NM65N

STD10NM65N
Mfr. #:
STD10NM65N
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Channel 650V Power MDmesh
Lifecycle:
New from this manufacturer.
Datasheet:
STD10NM65N Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STD10NM65N more Information STD10NM65N Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
9 A
Rds On - Drain-Source Resistance:
480 mOhms
Vgs - Gate-Source Voltage:
25 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
90 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
2.4 mm
Length:
6.6 mm
Series:
STP10NM65N
Transistor Type:
1 N-Channel
Width:
6.2 mm
Brand:
STMicroelectronics
Fall Time:
20 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
50 ns
Typical Turn-On Delay Time:
12 ns
Unit Weight:
0.139332 oz
Tags
STD10NM65, STD10NM6, STD10NM, STD10N, STD10, STD1, STD
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.43 Ohm, 9 A, DPAK second generation MDmesh(TM) Power MOSFET
***ure Electronics
N-Channel 650 V 0.48 Ohm Surface Mount MDmesh™ II Power MosFet - TO-252-3
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
MOSFET, N CH, 650V, 9A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:9A; On Resistance Rds(on):0.43ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
Part # Mfg. Description Stock Price
STD10NM65N
DISTI # 497-7957-1-ND		STMicroelectronicsMOSFET N-CH 650V 9A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		658In Stock
  • 500:$1.1163
  • 100:$1.4352
  • 10:$1.7860
  • 1:$1.9800
STD10NM65N
DISTI # 497-7957-6-ND		STMicroelectronicsMOSFET N-CH 650V 9A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		658In Stock
  • 500:$1.1163
  • 100:$1.4352
  • 10:$1.7860
  • 1:$1.9800
STD10NM65N
DISTI # 497-7957-2-ND		STMicroelectronicsMOSFET N-CH 650V 9A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    STD10NM65N
    DISTI # 511-STD10NM65N    		STMicroelectronicsMOSFET N-Channel 650V Power MDmesh
    RoHS: Compliant    		0
      STD10NM65NST Microwave CorporationPower Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant      		Europe - 2500
        STD10NM65N
        DISTI # 2098153        		STMicroelectronicsMOSFET, N CH, 650V, 9A, DPAK
        RoHS: Compliant        		76
        • 1:£1.3900
        • 10:£1.0900
        • 100:£0.8340
        • 250:£0.7810
        • 500:£0.7280
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        Availability
        Stock:
        Available
        On Order:
        2500
        Enter Quantity:
        Current price of STD10NM65N is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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