STD10NM6

STD10NM60N vs STD10NM60ND vs STD10NM65N

 
PartNumberSTD10NM60NSTD10NM60NDSTD10NM65N
DescriptionMOSFET N-channel 600 V Mdmesh 10AMOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWRMOSFET N-Channel 650V Power MDmesh
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V650 V650 V
Id Continuous Drain Current10 A8 A9 A
Rds On Drain Source Resistance550 mOhms600 mOhms480 mOhms
Vgs Gate Source Voltage25 V25 V25 V
Qg Gate Charge19 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation70 W70 W90 W
ConfigurationSingleSingleSingle
TradenameMDmesh--
PackagingReelReelReel
SeriesSTD10NM60NSTD10NM60NDSTP10NM65N
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time15 ns-20 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time12 ns-8 ns
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time32 ns-50 ns
Typical Turn On Delay Time10 ns-12 ns
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Channel Mode--Enhancement
Height--2.4 mm
Length--6.6 mm
Width--6.2 mm
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STD10NM60N MOSFET N-channel 600 V Mdmesh 10A
STD10NM60ND MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
STD10NM65N MOSFET N-Channel 650V Power MDmesh
STD10NM65N IGBT Transistors MOSFET N-Channel 650V Power MDmesh
STD10NM60N MOSFET N-CH 600V 10A DPAK
STD10NM60ND MOSFET N-CH 600V 8A DPAK
STD10NM60ND-CUT TAPE New and Original
STD10NM60N , MMBT2222A-1 New and Original
STD10NM60N 10NM60N New and Original
STD10NM65N,10NM65N,10N65 New and Original
STD10NM65N_08 New and Original
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