STE180NE10 vs STE180N05 vs STE180N10

 
PartNumberSTE180NE10STE180N05STE180N10
DescriptionMOSFET N-Ch 100 Volt 180 AMOSFET Power Module Transistor, Independent
ManufacturerSTMicroelectronics-ST
Product CategoryMOSFET-Module
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseISOTOP-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current180 A--
Rds On Drain Source Resistance6 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation360 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.1 mm--
Length38.2 mm--
SeriesSTE180NE10--
Transistor Type1 N-Channel--
TypeMOSFET--
Width25.5 mm--
BrandSTMicroelectronics--
Forward Transconductance Min30 S--
Fall Time440 ns--
Product TypeMOSFET--
Rise Time600 ns--
Factory Pack Quantity10--
SubcategoryMOSFETs--
Typical Turn Off Delay Time430 ns--
Typical Turn On Delay Time100 ns--
Unit Weight1 oz--
Top