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STE180NE10

STE180NE10
Mfr. #:
STE180NE10
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 180 A
Lifecycle:
New from this manufacturer.
Datasheet:
STE180NE10 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STE180NE10 DatasheetSTE180NE10 Datasheet (P4-P6)STE180NE10 Datasheet (P7-P9)STE180NE10 Datasheet (P10-P12)
ECAD Model:
More Information:
STE180NE10 more Information STE180NE10 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
ISOTOP-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
180 A
Rds On - Drain-Source Resistance:
6 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
360 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
9.1 mm
Length:
38.2 mm
Series:
STE180NE10
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
25.5 mm
Brand:
STMicroelectronics
Forward Transconductance - Min:
30 S
Fall Time:
440 ns
Product Type:
MOSFET
Rise Time:
600 ns
Factory Pack Quantity:
10
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
430 ns
Typical Turn-On Delay Time:
100 ns
Unit Weight:
1 oz
Tags
STE180N, STE18, STE1, STE
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 180 A, 100 V, 6 mohm, 10 V, 3 V
***icroelectronics
N-CHANNEL 100V - 4.5 mOhm - 180A ISOTOP STripFET MOSFET
***ment14 APAC
MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:360W; Transistor Case Style:ISOTOP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Current Temperature:25°C; External Depth:38mm; External Length / Height:12.2mm; External Width:25.4mm; Fixing Centres:31.6mm; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; No. of Transistors:1; On State resistance @ Vgs = 10V:6mohm; Package / Case:ISOTOP; Power Dissipation Pd:360W; Power Dissipation Pd:360W; Power Dissipation Ptot Max:360W; Pulse Current Idm:540A; Terminal Type:4mm Screw; Termination Type:Screw; Voltage Vds Typ:100V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
STE180NE10
DISTI # 497-3166-5-ND		STMicroelectronicsMOSFET N-CH 100V 180A ISOTOP
RoHS: Compliant
Min Qty: 100
Container: Tube		Limited Supply - Call
    STE180NE10
    DISTI # 511-STE180NE10    		STMicroelectronicsMOSFET N-Ch 100 Volt 180 A
    RoHS: Compliant    		0
      Image Part # Description
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      Availability
      Stock:
      Available
      On Order:
      5500
      Enter Quantity:
      Current price of STE180NE10 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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