February 2007 Rev 6 1/12
12
STE180NE10
N-channel 100V - 4.5m - 180A - ISOTOP
STripFET™ Power MOSFET
General features
100% avalanche tested
Low intrinsic capacitance
Gate charge minimized
Reduced voltage spread
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STE180NE10 100V <6m 180A
ISOTOP
www.st.com
Order codes
Part number Marking Package Packaging
STE180NE10 E180NE10 ISOTOP Tube
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Contents STE180NE10
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STE180NE10 Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 100 V
V
DGR
Drain-gate voltage (R
GS
= 20k)100V
V
GS
Gate-source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25°C 180 A
I
D
Drain current (continuous) at
T
C
= 100°C
119 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 360 A
P
TOT
Total dissipation at T
C
= 25°C 360 W
Derating factor 2.88 W/°C
V
ISO
Insulation withstand voltage (AC-RMS) 2500 V
T
j
T
stg
Operating junction temperature
storage temperature
-55 to 150 °C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max 0.37 °C/W
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
I
AR
Avalanche Current, Repetitive or Not-
Repetitive
(pulse width limited by T
j
max)
60 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
,
V
DD
= 25 V)
720 mJ
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STE180NE10

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 180 A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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