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STE180NE10
P1-P3
P4-P6
P7-P9
P10-P12
Obsolete Product(s) - Obsolete Product(s)
STE180NE10
Electrical character
istics
7/12
Figure 7.
Gate c
harge vs. gate
-sour
ce volta
ge
Figure 8.
Capacitance v
ariations
Figure 9.
Normalized gate thres
hold v
oltage
vs. temperature
Figure 10.
Normalized on resistanc
e vs.
temperature
Figure 11.
Sour
ce-drain diode f
orward
characterist
ics
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Test circuit
STE180NE10
8/12
3
T
est cir
cuit
Figure 12.
Switching times test circ
uit for
resistive l
oad
Figure 13.
Gate char
ge test circuit
Figure 14.
T
est circuit for inductive load
switc
hing and diode reco
very times
Figure 15.
Uncl
amped Inducti
ve load test
circuit
Figure 16.
Unc
lamped inductiv
e wa
vef
o
rm
Figure 17.
Switching time wavef
orm
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
STE180NE10
Package mechanica
l data
9/12
4
P
acka
g
e mechanical data
In order to meet en
vironmental requirements
, ST off
ers these de
vices in ECOP
A
CK®
pac
kages.
These pac
kages ha
v
e a Lead-free second le
vel in
terconnect. The cat
egory of
second le
v
el interconnect is marked on the pac
kage and on the inner bo
x label, in
compliance with JEDEC Standard
JESD97. The maximum ra
tings related to soldering
conditions are also mark
ed on the inner bo
x label. ECOP
ACK is an ST tr
ademark.
ECOP
ACK specifications are av
ailable at:
www
.s
t.com
Obsolete Product(s) - Obsolete Product(s)
P1-P3
P4-P6
P7-P9
P10-P12
STE180NE10
Mfr. #:
Buy STE180NE10
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 180 A
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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EMS
Payment:
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STE180NE10