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| PartNumber | STF12NM50ND | STF12NM50N | STF12NM50N STF14NM65N |
| Description | MOSFET N-channel 500 V 11 A Fdmesh | MOSFET N-Ch 500 V 0.33 Ohm 11 A 2nd Gen MDmesh | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Id Continuous Drain Current | 11 A | 18 A | - |
| Rds On Drain Source Resistance | 290 mOhms | 190 mOhms | - |
| Configuration | Single | Single | - |
| Packaging | Tube | Tube | - |
| Series | STF12NM50ND | STF12NM50N | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 25 W | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 9.3 mm | - |
| Length | - | 10.4 mm | - |
| Type | - | Power MOSFET | - |
| Width | - | 4.6 mm | - |
| Forward Transconductance Min | - | 8 S | - |
| Fall Time | - | 14 ns | - |
| Rise Time | - | 15 ns | - |
| Typical Turn Off Delay Time | - | 60 ns | - |
| Typical Turn On Delay Time | - | 15 ns | - |