STF12NM50N

STF12NM50N
Mfr. #:
STF12NM50N
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 500 V 0.33 Ohm 11 A 2nd Gen MDmesh
Lifecycle:
New from this manufacturer.
Datasheet:
STF12NM50N Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
STF12NM50N more Information STF12NM50N Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
18 A
Rds On - Drain-Source Resistance:
190 mOhms
Vgs - Gate-Source Voltage:
25 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
25 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
9.3 mm
Length:
10.4 mm
Series:
STF12NM50N
Transistor Type:
1 N-Channel
Type:
Power MOSFET
Width:
4.6 mm
Brand:
STMicroelectronics
Forward Transconductance - Min:
8 S
Fall Time:
14 ns
Product Type:
MOSFET
Rise Time:
15 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
60 ns
Typical Turn-On Delay Time:
15 ns
Unit Weight:
0.011640 oz
Tags
STF12NM5, STF12NM, STF12N, STF12, STF1, STF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 11A 3-Pin (3+Tab) TO-220FP Tube
***icroelectronics
N-channel 500V - 0.29Ohm - 11A - TO-220 /FP- D2PAK - DPAK
***ser
Power MOSFET Transistors N-Ch 500 V 0.33 Ohm 11 A 2nd Gen MDmesh
***r Electronics
Power Field-Effect Transistor, 11A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, 500V, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220FP; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:350mJ; Current, Idm Pulse:44A; Power, Pd:25W; Resistance, Rds on @ Vgs = 10V:0.38ohm; Voltage, Rds Measurement:10V; Voltage, Vds:550V; Voltage, Vds Max:600V; Voltage, Vgs Max:25V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
Part # Mfg. Description Stock Price
STF12NM50ND
DISTI # 497-16200-5-ND
STMicroelectronicsMOSFET N-CH 500V 11A TO-220FP
RoHS: Compliant
Min Qty: 1
Container: Tube
1988In Stock
  • 1000:$2.3978
  • 500:$2.7942
  • 100:$3.3887
  • 50:$3.6938
  • 1:$4.5300
STF12NM50N
DISTI # 497-4804-5-ND
STMicroelectronicsMOSFET N-CH 500V 11A TO220FP
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    STF12NM50ND
    DISTI # STF12NM50ND
    STMicroelectronicsTrans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220FP Tube (Alt: STF12NM50ND)
    RoHS: Compliant
    Min Qty: 50
    Container: Tube
    Europe - 0
    • 50:€0.9989
    • 100:€0.8169
    • 200:€0.7489
    • 300:€0.6919
    • 500:€0.6419
    STF12NM50N
    DISTI # 511-STF12NM50N
    STMicroelectronicsMOSFET N-Ch 500 V 0.33 Ohm 11 A 2nd Gen MDmesh
    RoHS: Compliant
    0
      STF12NM50ND
      DISTI # 511-STF12NM50ND
      STMicroelectronicsMOSFET N-channel 500 V 11 A Fdmesh
      RoHS: Compliant
      430
      • 1:$3.6600
      • 10:$3.1100
      • 100:$2.7000
      • 250:$2.5600
      • 500:$2.3000
      • 1000:$1.9400
      STF12NM50NDSTMicroelectronicsPower Field-Effect Transistor, 11A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      Europe - 1000
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        Availability
        Stock:
        Available
        On Order:
        2500
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