 | | |
| PartNumber | STF12NM50ND | STF12NM50N |
| Description | MOSFET N-channel 500 V 11 A Fdmesh | MOSFET N-Ch 500 V 0.33 Ohm 11 A 2nd Gen MDmesh |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 11 A | 18 A |
| Rds On Drain Source Resistance | 290 mOhms | 190 mOhms |
| Configuration | Single | Single |
| Packaging | Tube | Tube |
| Series | STF12NM50ND | STF12NM50N |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.011640 oz | 0.011640 oz |
| Vgs Gate Source Voltage | - | 25 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 25 W |
| Channel Mode | - | Enhancement |
| Height | - | 9.3 mm |
| Length | - | 10.4 mm |
| Type | - | Power MOSFET |
| Width | - | 4.6 mm |
| Forward Transconductance Min | - | 8 S |
| Fall Time | - | 14 ns |
| Rise Time | - | 15 ns |
| Typical Turn Off Delay Time | - | 60 ns |
| Typical Turn On Delay Time | - | 15 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STF12NM50ND | MOSFET N-channel 500 V 11 A Fdmesh | |
| STF12NM50N | MOSFET N-Ch 500 V 0.33 Ohm 11 A 2nd Gen MDmesh | ||
| STF12NM50N | MOSFET N-CH 500V 11A TO220FP | ||
| STF12NM50ND | MOSFET N-CH 500V 11A TO-220FP | ||
| STF12NM50N STF14NM65N | New and Original | ||
| STF12NM50NFP | New and Original |