PartNumber | STGP30H60DFB | STGP30H60DF | STGP30H60DF/IXFP22N65X2 |
Description | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
Collector Emitter Saturation Voltage | 1.55 V | 2.4 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 60 A | 60 A | - |
Pd Power Dissipation | 260 W | 260 W | - |
Minimum Operating Temperature | - 55 C | - 40 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Series | STGP30H60DFB | STGP30H60DF | - |
Continuous Collector Current Ic Max | 60 A | - | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Gate Emitter Leakage Current | +/- 250 nA | 250 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | IGBTs | IGBTs | - |
Packaging | - | Tube | - |
Unit Weight | - | 0.081130 oz | - |