STGP30H60DF

Mfr. #:: STGP30H60DF
Manufacturer:: STMicroelectronics
Description:: IGBT Transistors 600V 30A High Speed Trench Gate IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: STGP30H60DF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STGP30H60DF more Information STGP30H60DF Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2.4 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 60 A

Pd - Power Dissipation:: 260 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: STGP30H60DF

Packaging:: Tube

Brand:: STMicroelectronics

Gate-Emitter Leakage Current:: 250 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1000

Subcategory:: IGBTs

Unit Weight:: 0.081130 oz

Tags: STGP30H60, STGP30H, STGP30, STGP3, STGP, STG

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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STGP30H60DF Description

***ical: Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube

***icroelectronics: 600 V, 30 A high speed trench gate field-stop IGBT

***nell: IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)

***ure Electronics: V Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220

***ical: Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ark: Igbt, Single, 600V, 60A, To-220; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-220; No. Of Pins:3Pins; Rohs Compliant: Yes

***th Star Micro: Transistor IGBT Chip N-CH 600V 60A 3-Pin (3+Tab) TO-220 Tube

***el Electronic: STMICROELECTRONICS STGP30NC60W IGBT Single Transistor, 30 A, 2.5 V, 200 W, 600 V, TO-220, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, N 600V 30A TO-220; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulsed Current Icm: 200A; Rise Time: 12ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V

***ical: Trans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-220

***ure Electronics: IXGP30N60C3 Series 600 V 6 A Flange Mount High-Speed PT IGBT - TO-220AB

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ical: Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: STGP35HF60W Series 600 V 60 A Flange Mount Ultrafast IGBT - TO-220

***icroelectronics SCT: Short-circuit rugged IGBT, TO-220, Tube

***el Electronic: ANALOG DEVICES - ADUM2401BRWZ - Digital Isolator, Quad, 4 Channel, 50 ns, 2.7 V, 5.5 V, WSOIC, 16 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors 35A Ultrafast IGBT 600V 100kHz

***ical: Trans IGBT Chip N-CH 650V 74A 250000mW Automotive 3-Pin(3+Tab) TO-220 Tube

***nell: IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;

***ineon SCT: Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO220-3, RoHS

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 650V 74A 255000mW Automotive 3-Pin(3+Tab) TO-220 Tube

***ure Electronics: IKP40N65F5 Series 650 V 74 A 55 W Through Hole DuoPack IGBT - PG-TO-220-3

***nsix Microsemi: Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;

***ineon SCT: High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

Market price

Part #	Mfg.	Description	Stock	Price
STGP30H60DF DISTI # 30592835	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	50	50:$1.7723 10:$2.1420 9:$3.1620
STGP30H60DF DISTI # 497-13583-5-ND	STMicroelectronics	IGBT 600V 60A 260W TO220 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$1.7430 500:$2.0297 100:$2.3494 50:$2.6802 1:$3.1200
STGP30H60DFB DISTI # 497-16483-5-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, HB RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$1.6065 500:$1.9035 100:$2.3985 50:$2.6460 1:$3.2400
STGP30H60DF DISTI # C1S730200783396	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	50	50:$1.3900 10:$1.6800 1:$2.4800
STGP30H60DF DISTI # STGP30H60DF	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-220 Tube (Alt: STGP30H60DF) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 50	1:€1.8499 10:€1.1689 25:€0.8819 50:€0.8629 100:€0.8489 500:€0.8309 1000:€0.8029
STGP30H60DF DISTI # STGP30H60DF	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: STGP30H60DF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.4900 2000:$1.4900 4000:$1.3900 6000:$1.2900 10000:$1.2900
STGP30H60DFB DISTI # STGP30H60DFB	STMicroelectronics	IGBTs (Alt: STGP30H60DFB) RoHS: Compliant Min Qty: 50	Europe - 0	50:€1.5909 100:€1.3249 200:€1.2229 300:€1.1359 500:€1.0599
STGP30H60DF DISTI # 52AC7501	STMicroelectronics	IGBT, 600V, 60A, TO-220-3,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:260W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-220,No. of Pins:3Pins,Operating , RoHS Compliant: Yes	3	1:$1.7000 10:$1.4500 100:$1.1600 500:$1.0700 1000:$0.9600 2500:$0.7800 5000:$0.7540
STGP30H60DF DISTI # 511-STGP30H60DF	STMicroelectronics	IGBT Transistors 600V 30A High Speed Trench Gate IGBT RoHS: Compliant	0	1:$2.7800 10:$2.3700 100:$2.0500 250:$1.9500 500:$1.7500 1000:$1.4700 2000:$1.4000
STGP30H60DFB DISTI # 511-STGP30H60DFB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed RoHS: Compliant	2	1:$2.6500 10:$2.2500 100:$1.8000 500:$1.5800 1000:$1.3100 2000:$1.2200
STGP30H60DF	STMicroelectronics	STGP30Hxx Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220 RoHS: Compliant	500Tube	5:$2.8900 50:$2.5200 250:$2.1400
STGP30H60DFB	STMicroelectronics	RoHS: Compliant	Europe - 1000
STGP30H60DF DISTI # STGP30H60DF	STMicroelectronics	600V 60A 260W TO220 RoHS: Compliant	0	10:€1.6300 50:€1.4300 200:€1.3300 500:€1.2800
STGP30H60DF	STMicroelectronics	INSTOCK	500
STGP30H60DF DISTI # 2851957	STMicroelectronics	IGBT, 600V, 60A, TO-220-3 RoHS: Compliant	3	5:£1.9400 25:£1.8300 100:£1.5800 250:£1.5100 500:£1.3600
STGP30H60DFB DISTI # 2889922	STMicroelectronics	IGBT, SINGLE, 600V, 60A, TO-220 RoHS: Compliant	0	1:£2.6100 10:£1.8700 100:£1.6900 250:£1.5000 500:£1.3100
STGP30H60DF DISTI # XSFP00000132711	STMicroelectronics	Insulated Gate Bipolar Transistor, 60AI(C),600VV(BR)CES, N-Channel RoHS: Compliant	336	35:$5.7800 336:$5.2500
STGP30H60DF	STMicroelectronics	600V,30A,high speed IGBT	10	1:$1.2300 100:$1.1300 500:$1.0400 1000:$0.9800
STGP30H60DF DISTI # 2851957	STMicroelectronics	IGBT, 600V, 60A, TO-220-3 RoHS: Compliant	3	5:$3.4000 25:$2.9100 100:$2.2000 250:$1.8500 500:$1.6000 1000:$1.5400 5000:$1.4800

Image	Part #	Description
	Mfr.#: STGP3NC120HD OMO.#: OMO-STGP3NC120HD	IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar
	Mfr.#: STGP30V60DF OMO.#: OMO-STGP30V60DF	IGBT Transistors 600V 30A High Speed Trench Gate IGBT
	Mfr.#: STGP30NC60W OMO.#: OMO-STGP30NC60W	IGBT Transistors N-channel MOSFET
	Mfr.#: STGP35N35LZ OMO.#: OMO-STGP35N35LZ-STMICROELECTRONICS	IGBT Transistors EAS 450mJ 345V PowerMESH IGBT
	Mfr.#: STGP30H65F OMO.#: OMO-STGP30H65F-STMICROELECTRONICS	IGBT Transistors Trench gte FieldStop IGBT 600V 30A
	Mfr.#: STGP30H60DFB OMO.#: OMO-STGP30H60DFB-STMICROELECTRONICS	TRENCH GATE FIELD-STOP IGBT, HB
	Mfr.#: STGP3NB60HD OMO.#: OMO-STGP3NB60HD-STMICROELECTRONICS	IGBT 600V 10A 50W TO220
	Mfr.#: STGP30NC60S OMO.#: OMO-STGP30NC60S-STMICROELECTRONICS	IGBT 600V 55A 175W TO220
	Mfr.#: STGP3HF60HD OMO.#: OMO-STGP3HF60HD-STMICROELECTRONICS	IGBT BIPO 600V 3A TO220
	Mfr.#: STGP3NB60H OMO.#: OMO-STGP3NB60H-1190	New and Original

STGP30H60DF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes