 |  | |
| PartNumber | STGP30H60DFB | STGP30H60DF |
| Description | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed | IGBT Transistors 600V 30A High Speed Trench Gate IGBT |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-220-3 | TO-220-3 |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.55 V | 2.4 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 60 A | 60 A |
| Pd Power Dissipation | 260 W | 260 W |
| Minimum Operating Temperature | - 55 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Series | STGP30H60DFB | STGP30H60DF |
| Continuous Collector Current Ic Max | 60 A | - |
| Brand | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | +/- 250 nA | 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | IGBTs | IGBTs |
| Packaging | - | Tube |
| Unit Weight | - | 0.081130 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STGP30H60DFB | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed | |
| STGP30H60DF | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | ||
| STGP30H60DF | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | ||
| STGP30H60DFB | TRENCH GATE FIELD-STOP IGBT, HB | ||
| STGP30H60DF/IXFP22N65X2 | New and Original |