PartNumber | STGP10H60DF | STGP10M65DF2 | STGP100N30 |
Description | IGBT Transistors Trench gate H series 600V 10A HiSpd | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss | IGBT Transistors 330volt 90 Amp |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-220-3 | - | TO-220-3 |
Mounting Style | Through Hole | - | Through Hole |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 600 V | - | 330 V |
Collector Emitter Saturation Voltage | 1.5 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | 20 V |
Continuous Collector Current at 25 C | 20 A | - | - |
Pd Power Dissipation | 115 W | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 150 C |
Series | STGP10H60DF | STGP10M65DF2 | STGP100N30 |
Packaging | Tube | Tube | Reel |
Continuous Collector Current Ic Max | 10 A | - | 90 A |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 nA | - | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.211644 oz | 0.070548 oz | 0.211644 oz |
Height | - | - | 9.15 mm |
Length | - | - | 10.4 mm |
Width | - | - | 4.6 mm |