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STGP10NC60KD

Mfr. #:: STGP10NC60KD
Manufacturer:: STMicroelectronics
Description:: IGBT Transistors PowerMESH&#34 IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: STGP10NC60KD Datasheet
ECAD Model:

Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of STGP10NC60KD is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.14~~; ~~$1.14~~

10: ~~$0.98~~; ~~$9.80~~

100: ~~$0.75~~; ~~$75.30~~

500: ~~$0.67~~; ~~$333.00~~

1000: ~~$0.52~~; ~~$525.00~~

2000: ~~$0.47~~; ~~$932.00~~

10000: ~~$0.45~~; ~~$4 490.00~~

25000: ~~$0.43~~; ~~$10 850.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2 V

Maximum Gate Emitter Voltage:: 20 V

Pd - Power Dissipation:: 25 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: STGP10NC60KD

Packaging:: Tube

Continuous Collector Current Ic Max:: 20 A

Height:: 9.15 mm

Length:: 10.4 mm

Width:: 4.6 mm

Brand:: STMicroelectronics

Continuous Collector Current:: 9 A

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1000

Subcategory:: IGBTs

Unit Weight:: 0.211644 oz

Tags: STGP10NC, STGP10N, STGP10, STGP1, STGP, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGP10NC60KD Ratings and Reviews

C***c

Looks quality, all 10 pieces. But delivery well very long!

2019-04-21

S***o

Not yet, but i'm already about * ball protection time

2019-02-02

STGP10NC60KD Description

*** Source Electronics: Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

*** Source Electronics: Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220

***r Electronics: Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ure Electronics: STGP Series IGBT Low On State Through Hole IGBT - TO-220-3

***nell: IGBT, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***-Wing Technology: STMICROELECTRONICS STGP6NC60HD IGBT Single Transistor, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 Pins

***ical: Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3+Tab) TO-220AB Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ical: Trans IGBT Chip N-CH 600V 14A 56000mW 3-Pin(3+Tab) TO-220 Tube

***ure Electronics: STG Series Powermesh Low Turn Off Energy Through Hole IGBT - TO-220-2

***r Electronics: Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***icroelectronics: 6 A, 600 V hyper fast IGBT with Ultrafast diode

***Yang: IKP10N60T: 650V 10A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3

***ow.cn: Trans IGBT Chip N-CH 600V 24A 110000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS

***nsix Microsemi: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ical: Trans IGBT Chip N-CH 600V 24A 110000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IGP10N60T Series 600 V 24 A Through Hole IGBT TrenchStop - PG-TO-220-3

***ark: Igbt Single Transistor, 600V, To-220-3 Rohs Compliant: Yes |Infineon IGP10N60TXKSA1

***nsix Microsemi: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ineon SCT: Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ical: Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IKP06N60T: 600V 12A Through Hole Low Loss DuoPack IGBT TrenchStop - PG-TO-220-3

***nsix Microsemi: Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, 600V, 6A, TO-220; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:88W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; Current Ic Continuous a Max:6A; No. of Transistors:1; Package / Case:TO-220; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon SCT: The 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

Market price

Part #	Mfg.	Description	Stock	Price
STGP10NC60KD DISTI # V99:2348_18459442	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	1966	1000:$0.5240 500:$0.6636 100:$0.7494 10:$1.0697 1:$1.2417
STGP10NC60KD DISTI # V36:1790_06560696	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0
STGP10NC60KD DISTI # 497-5120-5-ND	STMicroelectronics	IGBT 600V 20A 65W TO220 RoHS: Compliant Min Qty: 1 Container: Tube	1291In Stock	5000:$0.4900 2500:$0.5145 500:$0.6983 100:$0.8453 50:$1.0290 10:$1.0840 1:$1.2100
STEVAL-IHM023V1 DISTI # 497-10370-ND	STMicroelectronics	EVAL BOARD FOR L6390/STGP10NC60 RoHS: Compliant Min Qty: 1 Container: Bulk	2In Stock	1:$229.6900
STM32100B-MCKIT DISTI # 497-12818-ND	STMicroelectronics	EVALUATION BOARD WITH 16 MBYTE S RoHS: Compliant Min Qty: 1 Container: Box	1In Stock	1:$1,318.8000
STEVAL-IHM023V2 DISTI # 497-12063-ND	STMicroelectronics	BOARD DEMO L6390 STGP10NC60KD RoHS: Compliant Min Qty: 1 Container: Bulk	Limited Supply - Call
STGP10NC60KD DISTI # 30738190	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	1966	1000:$0.5633 500:$0.7134 100:$0.8056 13:$1.0454
STGP10NC60KD DISTI # 31002465	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	1100	1000:$0.6160 500:$0.6593 100:$0.7455
STGP10NC60KD DISTI # STGP10NC60KD	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube (Alt: STGP10NC60KD) RoHS: Compliant Min Qty: 50 Container: Tube	Europe - 950	500:€0.5109 300:€0.5499 200:€0.5959 100:€0.6499 50:€0.7949
STGP10NC60KD DISTI # STGP10NC60KD	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP10NC60KD) RoHS: Compliant Min Qty: 2000 Container: Tube	Americas - 0	20000:$0.4469 10000:$0.4559 6000:$0.4769 4000:$0.4999 2000:$0.5239
STGP10NC60KD DISTI # 26M3559	STMicroelectronics	IGBT Single Transistor, 20 A, 2.5 V, 60 W, 600 V, TO-220, 3 RoHS Compliant: Yes	867	1000:$0.6010 500:$0.7360 100:$0.8190 10:$1.0400 1:$1.2000
STGP10NC60KD DISTI # 511-STGP10NC60KD	STMicroelectronics	IGBT Transistors PowerMESH&#34 IGBT RoHS: Compliant	1741	1:$1.1400 10:$0.9800 100:$0.7530 500:$0.6660 1000:$0.5250 2000:$0.4660 10000:$0.4490
STGP10NC60KD	STMicroelectronics	STGP10NC60K Series 600 V 10 A N-Channel Short Circuit Rugged IGBT - TO-220 RoHS: Compliant	1585Tube	25:$0.8550 250:$0.5250 1000:$0.4650 2000:$0.4400
STGP10NC60KD DISTI # 6868376	STMicroelectronics	TRANSISTOR IGBT N-CH 600V 20A TO220, PK	1280	250:£0.5240 100:£0.5460 50:£0.6320 25:£0.7140 5:£0.8960
STGP10NC60KD DISTI # STGP10NC60KD	STMicroelectronics	Transistor: IGBT,600V,10A,65W,TO220AB	400	1:$1.2600 5:$1.0800 25:$0.8700 100:$0.7800
STGP10NC60KD DISTI # 1293647	STMicroelectronics	IGBT, TO-220 RoHS: Compliant	867	1000:$0.8070 500:$1.0200 100:$1.1600 5:$1.5100
STGP10NC60KD DISTI # 1293647	STMicroelectronics	IGBT, TO-220	1291	500:£0.5280 250:£0.5640 100:£0.5990 25:£0.7780 5:£0.8670
STGP10NC60KD DISTI # XSFP00000096705	STMicroelectronics	RoHS: Compliant	856 in Stock0 on Order	856:$0.9545 191:$1.0500
STGP10NC60KD DISTI # IGBT1518	STMicroelectronics	IGBT 600V 10A 1,9VTO220-3	Stock DE - 32400Stock HK - 0Stock US - 0	50:$0.7103 100:$0.6666 200:$0.6557 350:$0.6447 650:$0.6065
STGP10NC60KD DISTI # STGP10NC60KD	STMicroelectronics	600V 20A 65W TO220 RoHS: Not Compliant	380	10:€0.9000 50:€0.6000 200:€0.5000 500:€0.4800

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