STGP10NC60HD

Mfr. #:: STGP10NC60HD
Manufacturer:: STMicroelectronics
Description:: IGBT Transistors PowerMESH TM IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: STGP10NC60HD Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: STGP10NC60HD more Information STGP10NC60HD Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: SMD/SMT

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.9 V

Maximum Gate Emitter Voltage:: 20 V

Pd - Power Dissipation:: 56 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: STGP10NC60HD

Packaging:: Tube

Continuous Collector Current Ic Max:: 20 A

Height:: 9.15 mm

Length:: 10.4 mm

Width:: 4.6 mm

Brand:: STMicroelectronics

Continuous Collector Current:: 7 A

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1000

Subcategory:: IGBTs

Unit Weight:: 0.012346 oz

Tags: STGP10NC, STGP10N, STGP10, STGP1, STGP, STG

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGP10NC60HD Ratings and Reviews

M***Z

It corresponds to the order.

2019-04-25

A***v

Very good

2019-07-02

C***m

tested good...

2019-07-02

D***r

thenks 5 stars

2019-05-14

STGP10NC60HD Description

***ure Electronics: STGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220

***ical: Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ment14 APAC: IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***-Wing Technology: STMICROELECTRONICS STGP6NC60HD IGBT Single Transistor, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 Pins

***ical: Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3+Tab) TO-220AB Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***Yang: IKP10N60T: 650V 10A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3

***ow.cn: Trans IGBT Chip N-CH 600V 24A 110000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS

***nsix Microsemi: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

*** Source Electronics: Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220

***r Electronics: Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ure Electronics: STGP Series IGBT Low On State Through Hole IGBT - TO-220-3

***nell: IGBT, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ical: Trans IGBT Chip N-CH 600V 24A 110000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IGP10N60T Series 600 V 24 A Through Hole IGBT TrenchStop - PG-TO-220-3

***ark: Igbt Single Transistor, 600V, To-220-3 Rohs Compliant: Yes |Infineon IGP10N60TXKSA1

***nsix Microsemi: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ineon SCT: Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

*** Source Electronics: Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220

***el Electronic: STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins

***icroelectronics: N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

***ure Electronics: STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220

***r Electronics: Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope

***ical: Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IKP06N60T: 600V 12A Through Hole Low Loss DuoPack IGBT TrenchStop - PG-TO-220-3

***nsix Microsemi: Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, 600V, 6A, TO-220; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:88W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; Current Ic Continuous a Max:6A; No. of Transistors:1; Package / Case:TO-220; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon SCT: The 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

Market price

Part #	Mfg.	Description	Stock	Price
STGP10NC60HD DISTI # V99:2348_17652368	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	11	500:$0.4222 100:$0.4554 10:$0.7489 1:$0.9365
STGP10NC60HD DISTI # 497-5118-5-ND	STMicroelectronics	IGBT 600V 20A 65W TO220 RoHS: Compliant Min Qty: 1 Container: Tube	2011In Stock	1000:$0.5497 500:$0.6963 100:$0.8428 50:$1.0260 1:$1.2100
STGP10NC60HD DISTI # 30702251	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	2000	50:$0.5034
STGP10NC60HD DISTI # STGP10NC60HD	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP10NC60HD) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$0.5229 10:$0.5139 25:$0.5059 50:$0.4979 100:$0.4759 500:$0.4549 1000:$0.4449
STGP10NC60HD	STMicroelectronics	STGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220 RoHS: Compliant	6350Tube	50:$0.9150 250:$0.7850 850:$0.7100
STGP10NC60HD DISTI # 511-STGP10NC60HD	STMicroelectronics	IGBT Transistors PowerMESH TM IGBT RoHS: Compliant	3980	1:$1.1500 10:$0.9780 100:$0.7510 500:$0.6640 1000:$0.5240 2000:$0.4650
STGP10NC60HD DISTI # C1S730200637510	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	11	10:$0.7631
STGP10NC60HD DISTI # C1S730200483256	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	2000	2000:$0.6880 1000:$0.8310

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