PartNumber | STGWT40H65DFB | STGWT40H65FB | STGWT40H65FB,GWT40H65FB, |
Description | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-3P | TO-3P | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 80 A | 80 A | - |
Pd Power Dissipation | 283 W | 283 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Series | STGWT40H65DFB | STGWT40H65FB | - |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 40 A | 40 A | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Gate Emitter Leakage Current | 250 nA | 250 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 300 | 300 | - |
Subcategory | IGBTs | IGBTs | - |
Unit Weight | 0.238311 oz | 0.238311 oz | - |