STGWT40H65DFB

STGWT40H65DFB
Mfr. #:
STGWT40H65DFB
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
STGWT40H65DFB Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STGWT40H65DFB more Information STGWT40H65DFB Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-3P
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.6 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
80 A
Pd - Power Dissipation:
283 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
STGWT40H65DFB
Packaging:
Tube
Continuous Collector Current Ic Max:
40 A
Brand:
STMicroelectronics
Gate-Emitter Leakage Current:
250 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
300
Subcategory:
IGBTs
Unit Weight:
0.238311 oz
Tags
STGWT40H65, STGWT40H6, STGWT40H, STGWT4, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
STMicroelectronics STGWT40H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
***ure Electronics
STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P
***p One Stop Japan
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube
***ied Electronics & Automation
IGBT Trench HB Series 650V 40A TO-3P
***i-Key
IGBT 650V 80A 283W TO3P-3L
***ark
Ptd High Voltage
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Part # Mfg. Description Stock Price
STGWT40H65DFB
DISTI # V36:1790_06560827
STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
0
    STGWT40H65DFB
    DISTI # 497-14229-5-ND
    STMicroelectronicsIGBT 650V 80A 283W TO3P-3L
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    396In Stock
    • 2520:$2.1420
    • 510:$2.6668
    • 120:$3.1327
    • 30:$3.6147
    • 10:$3.8230
    • 1:$4.2600
    STGWT40H65DFB
    DISTI # STGWT40H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube
    Europe - 0
    • 300:€1.7900
    • 180:€1.8900
    • 120:€1.9900
    • 60:€2.0900
    • 30:€2.1900
    STGWT40H65DFB
    DISTI # STGWT40H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 3000:$1.8900
    • 6000:$1.8900
    • 1800:$1.9900
    • 1200:$2.0900
    • 600:$2.1900
    STGWT40H65DFB
    DISTI # STGWT40H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Asia - 0
    • 30000:$1.4868
    • 15000:$1.5270
    • 6000:$1.5694
    • 3000:$1.6377
    • 1800:$1.7121
    • 1200:$1.7937
    • 600:$1.8833
    STGWT40H65DFB
    DISTI # 40X8766
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$1.9900
    • 250:$2.0500
    • 100:$2.4500
    • 50:$2.8300
    • 25:$3.0200
    • 10:$3.4500
    • 1:$3.9800
    STGWT40H65DFB
    DISTI # 511-STGWT40H65DFB
    STMicroelectronicsIGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
    RoHS: Compliant
    311
    • 1:$4.0500
    • 10:$3.4400
    • 100:$2.9800
    • 250:$2.8300
    • 500:$2.5400
    • 1000:$2.1400
    • 2500:$2.0300
    STGWT40H65DFB
    DISTI # 8294506P
    STMicroelectronicsIGBT TRENCH HB SERIES 650V 40A TO-3P, TU74
    • 10:£2.5000
    • 5:£2.7100
    STGWT40H65DFBSTMicroelectronicsInsulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
    RoHS: Compliant
    Europe - 720
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      Availability
      Stock:
      309
      On Order:
      2292
      Enter Quantity:
      Current price of STGWT40H65DFB is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $4.05
      $4.05
      10
      $3.44
      $34.40
      100
      $2.98
      $298.00
      250
      $2.83
      $707.50
      500
      $2.54
      $1 270.00
      1000
      $2.14
      $2 140.00
      2500
      $2.03
      $5 075.00
      5000
      $1.95
      $9 750.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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