STGWT40H6

STGWT40H65DFB vs STGWT40H60DLFB vs STGWT40H65FB

 
PartNumberSTGWT40H65DFBSTGWT40H60DLFBSTGWT40H65FB
DescriptionIGBT Transistors 650V 40A HSpd trench gate field-stop IGBTIGBT Transistors 600V 40A HSpd trench gate field-stop IGBTIGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-3PTO-3PTO-3P
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max650 V600 V650 V
Collector Emitter Saturation Voltage1.6 V1.6 V1.6 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C80 A80 A80 A
Pd Power Dissipation283 W283 W283 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
SeriesSTGWT40H65DFBSTGWT40H60DLFBSTGWT40H65FB
PackagingTubeTubeTube
Continuous Collector Current Ic Max40 A40 A40 A
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current250 nA250 nA250 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity300300300
SubcategoryIGBTsIGBTsIGBTs
Unit Weight0.238311 oz0.238311 oz0.238311 oz
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGWT40H65DFB IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
STGWT40H60DLFB IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT
STGWT40H65FB IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
STGWT40H65DFB IGBT 650V 80A 283W TO3P-3L
STGWT40H60DLFB IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT
STGWT40H65FB IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
STGWT40H65FB,GWT40H65FB, New and Original
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