SUM90142E-GE3 vs SUM90140E-GE3 vs SUM90220E-GE3

 
PartNumberSUM90142E-GE3SUM90140E-GE3SUM90220E-GE3
DescriptionMOSFET 200V Vds 20V Vgs TO-263MOSFET 200V Vds 20V Vgs D2PAK (TO-263)MOSFET 200V Vds 20V Vgs TO-263
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V200 V200 V
Id Continuous Drain Current90 A90 A64 A
Rds On Drain Source Resistance12.3 mOhms13.8 mOhms18 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge87 nC96 nC48 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation375 W375 W230 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameThunderFETThunderFET-
PackagingTubeTube-
Height4.83 mm--
Length10.67 mm--
SeriesSUMSUM-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.65 mm--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min63 S75 S37 S
Fall Time80 ns80 ns38 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time125 ns112 ns35 ns
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time27 ns35 ns28 ns
Typical Turn On Delay Time14 ns13 ns15 ns
Unit Weight0.077603 oz0.077603 oz0.077603 oz
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