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| PartNumber | ZXMC3A17DN8TC | ZXMC3A17DN8TA-CUT TAPE | ZXMC3A17DN8TA |
| Description | MOSFET 30V Enhancement Mode | IGBT Transistors MOSFET 30V Enhancement Mode | |
| Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | - | N-Channel P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 5.4 A | - | - |
| Rds On Drain Source Resistance | 65 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1.25 W | - | - |
| Configuration | Dual | - | Dual Dual Drain |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | 1 N-Channel 1 P-Channel |
| Type | MOSFET | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 6.4 ns, 2.9 ns | - | 11.2 ns 8.7 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 6.4 ns, 2.9 ns | - | 6.4 ns 2.9 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns, 29.2 ns | - | 16 ns 29.2 ns |
| Typical Turn On Delay Time | 2.9 ns, 1.7 ns | - | 2.9 ns 1.7 ns |
| Unit Weight | 0.002610 oz | - | 0.002610 oz |
| Series | - | - | ZXMC3 |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | N and P-Channel |
| Power Max | - | - | 1.25W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 600pF @ 25V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 4.1A, 3.4A |
| Rds On Max Id Vgs | - | - | 50 mOhm @ 7.8A, 10V |
| Vgs th Max Id | - | - | 1V @ 250μA (Min) |
| Gate Charge Qg Vgs | - | - | 12.2nC @ 10V |
| Pd Power Dissipation | - | - | 2.1 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 5.4 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 65 mOhms |