ZXMC3A17DN8TA

ZXMC3A17DN8TA
Mfr. #:
ZXMC3A17DN8TA
Manufacturer:
Diodes Incorporated
Description:
IGBT Transistors MOSFET 30V Enhancement Mode
Lifecycle:
New from this manufacturer.
Datasheet:
ZXMC3A17DN8TA Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
ZXMC3A17DN8TA DatasheetZXMC3A17DN8TA Datasheet (P4-P6)ZXMC3A17DN8TA Datasheet (P7-P9)ZXMC3A17DN8TA Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Diodes Incorporated
Product Category
FETs - Arrays
Series
ZXMC3
Packaging
Digi-ReelR Alternate Packaging
Unit-Weight
0.002610 oz
Mounting-Style
SMD/SMT
Package-Case
8-SOIC (0.154", 3.90mm Width)
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
2 Channel
Supplier-Device-Package
8-SO
Configuration
Dual Dual Drain
FET-Type
N and P-Channel
Power-Max
1.25W
Transistor-Type
1 N-Channel 1 P-Channel
Drain-to-Source-Voltage-Vdss
30V
Input-Capacitance-Ciss-Vds
600pF @ 25V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
4.1A, 3.4A
Rds-On-Max-Id-Vgs
50 mOhm @ 7.8A, 10V
Vgs-th-Max-Id
1V @ 250μA (Min)
Gate-Charge-Qg-Vgs
12.2nC @ 10V
Pd-Power-Dissipation
2.1 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
11.2 ns 8.7 ns
Rise-Time
6.4 ns 2.9 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
5.4 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
65 mOhms
Transistor-Polarity
N-Channel P-Channel
Typical-Turn-Off-Delay-Time
16 ns 29.2 ns
Typical-Turn-On-Delay-Time
2.9 ns 1.7 ns
Channel-Mode
Enhancement
Tags
ZXMC3A17DN8T, ZXMC3A17D, ZXMC3A17, ZXMC3A1, ZXMC3A, ZXMC3, ZXMC, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8
***ical
Trans MOSFET N/P-CH 30V 4.1A/3.4A 8-Pin SOIC T/R
***des Inc SCT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, N+P, 30V VDS, 20±V VGS
***(Formerly Allied Electronics)
MOSFET; N P channel; Dual; Enhance; 30V; SO8
***i-Key
MOSFET N/P-CHAN DUAL 30V 8SOIC
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET, DUAL, NP, 30V, SO-8; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.4A; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
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IRF7303PBF Dual N-channel MOSFET Transistor; 4.9 A; 30 V; 8-Pin SOIC
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Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
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Transistor NPN Mos IRF7303/IRF7303PBF INTERNATIONAL RECTIFIER RoHS V=30 SO8
***roFlash
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Po
***ark
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:-; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes
***(Formerly Allied Electronics)
SI4532CDY-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.3 A; 6 A; 30V; 8-Pin SOIC
***et
Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R
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Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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IRF7313PBF Dual N-channel MOSFET Transistor; 6.5 A; 30 V; 8-Pin SOIC
***eco
Transistor MOSFET N Channel 30 Volt 6.5 .6 Amp 8 Pin SOIC Tape and Reel
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***ure Electronics
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***nell
MOSFET, DUAL, NN, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Di
***emi
N-Channel PowerTrenchTM MOSFET, Logic Level, 30V, 6.5A 38mΩ
***ure Electronics
N-Channel 30 V 38 mOhm Logic Level PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R - Tape and Reel
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm;
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 40A; SMD Marking: FDS6630A; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3V; Voltage Vgs th Min: 1V
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SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor; 5.9 A; 30 V; 8-Pin SOIC
***ure Electronics
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*** Source Electronics
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***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6900mA; On Resistance, Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:20V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, DUAL, N, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:4936; Current Id Max:6.9A; N-channel Gate Charge:4.5nC; On State Resistance @ Vgs = 4.5V:51mohm; On State resistance @ Vgs = 10V:35mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
ZXMC3A17DN8TA
DISTI # ZXMC3A17DN8TR-ND
Diodes IncorporatedMOSFET N/P-CH 30V 8SOIC
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
On Order
  • 500:$0.5852
ZXMC3A17DN8TA
DISTI # ZXMC3A17DN8CT-ND
Diodes IncorporatedMOSFET N/P-CH 30V 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 100:$0.7772
  • 10:$0.9830
  • 1:$1.1100
ZXMC3A17DN8TA
DISTI # ZXMC3A17DN8DKR-ND
Diodes IncorporatedMOSFET N/P-CH 30V 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 100:$0.7772
  • 10:$0.9830
  • 1:$1.1100
ZXMC3A17DN8TA
DISTI # ZXMC3A17DN8TA
Diodes IncorporatedTrans MOSFET N/P-CH 30V 5.4A/4.4A 8-Pin SO T/R - Tape and Reel (Alt: ZXMC3A17DN8TA)
RoHS: Not Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$0.5219
  • 1000:$0.5199
  • 2000:$0.5189
  • 3000:$0.5179
  • 5000:$0.5169
ZXMC3A17DN8TA
DISTI # 62M1299
Diodes IncorporatedTrans MOSFET N/P-CH 30V 5.4A/4.4A 8-Pin SO T/R - Product that comes on tape, but is not reeled (Alt: 62M1299)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$1.0300
  • 10:$0.8900
  • 25:$0.8290
  • 50:$0.7660
  • 100:$0.7040
ZXMC3A17DN8TA
DISTI # 70438796
Diodes IncorporatedMOSFET,N P channel,Dual,Enhance,30V,SO8
RoHS: Compliant
0
  • 25:$1.3200
  • 125:$1.1600
  • 250:$1.0400
  • 500:$0.9500
ZXMC3A17DN8TA
DISTI # 522-ZXMC3A17DN8TA
Diodes IncorporatedMOSFET 30V Enhancement Mode
RoHS: Compliant
0
  • 1:$0.9200
  • 10:$0.7840
  • 100:$0.6030
  • 500:$0.5330
ZXMC3A17DN8TAZetex / Diodes Inc 331705
    ZXMC3A17DN8TA
    DISTI # 1471154
    Diodes IncorporatedMOSFET, DUAL, NP, 30V, SO-8
    RoHS: Compliant
    0
    • 5:£0.8790
    • 25:£0.7430
    • 100:£0.6040
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    OMO.#: OMO-ZXMC3A16DN8QTA-1190

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    Availability
    Stock:
    Available
    On Order:
    1500
    Enter Quantity:
    Current price of ZXMC3A17DN8TA is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.63
    $0.63
    10
    $0.60
    $5.98
    100
    $0.57
    $56.70
    500
    $0.54
    $267.75
    1000
    $0.50
    $504.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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