PartNumber | ZXMC3A17 | ZXMC3A17DN8 | ZXMC3A17DN8TA |
Description | MOSFET N and P Channel | IGBT Transistors MOSFET 30V Enhancement Mode | |
Manufacturer | ZETEX | ZETEX | Diodes Incorporated |
Product Category | FETs - Arrays | FETs - Arrays | FETs - Arrays |
Series | - | - | ZXMC3 |
Packaging | - | - | Digi-ReelR Alternate Packaging |
Unit Weight | - | - | 0.002610 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
Technology | - | - | Si |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 2 Channel |
Supplier Device Package | - | - | 8-SO |
Configuration | - | - | Dual Dual Drain |
FET Type | - | - | N and P-Channel |
Power Max | - | - | 1.25W |
Transistor Type | - | - | 1 N-Channel 1 P-Channel |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 600pF @ 25V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 4.1A, 3.4A |
Rds On Max Id Vgs | - | - | 50 mOhm @ 7.8A, 10V |
Vgs th Max Id | - | - | 1V @ 250μA (Min) |
Gate Charge Qg Vgs | - | - | 12.2nC @ 10V |
Pd Power Dissipation | - | - | 2.1 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 11.2 ns 8.7 ns |
Rise Time | - | - | 6.4 ns 2.9 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 5.4 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Rds On Drain Source Resistance | - | - | 65 mOhms |
Transistor Polarity | - | - | N-Channel P-Channel |
Typical Turn Off Delay Time | - | - | 16 ns 29.2 ns |
Typical Turn On Delay Time | - | - | 2.9 ns 1.7 ns |
Channel Mode | - | - | Enhancement |