ZXMC4559DN8TA vs ZXMC4559DN8TC vs ZXMC4559DN8TA-CUT TAPE

 
PartNumberZXMC4559DN8TAZXMC4559DN8TCZXMC4559DN8TA-CUT TAPE
DescriptionMOSFET Comp. 60V NP-ChnlMOSFET 60V TRENCH MOSFET 20V VGS P-Channel
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current4.7 A3.6 A, 2.6 A-
Rds On Drain Source Resistance75 mOhms55 mOhms, 125 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.1 W1.25 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.5 mm--
Length5 mm--
SeriesZXMC45ZXMC4-
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel, 1 P-Channel-
Width4 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time10.6 ns, 10 ns10.6 ns, 10 ns-
Product TypeMOSFETMOSFET-
Rise Time4.1 ns4.1 ns, 4.1 ns-
Factory Pack Quantity5002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26.2 ns, 35 ns26.2 ns, 35 ns-
Typical Turn On Delay Time3.5 ns3.5 ns, 3.5 ns-
Unit Weight0.002610 oz0.002610 oz-
Vgs th Gate Source Threshold Voltage-1 V-
Qg Gate Charge-20.4 nC, 12.1 nC-
Forward Transconductance Min-10.2 S, 7.2 S-
Top