ZXMC4559DN8TC

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

3.6 A, 2.6 A

Rds On - Drain-Source Resistance:

55 mOhms, 125 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

20.4 nC, 12.1 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.25 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Series:

ZXMC4

Transistor Type:

1 N-Channel, 1 P-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

10.2 S, 7.2 S

Fall Time:

10.6 ns, 10 ns

Product Type:

MOSFET

Rise Time:

4.1 ns, 4.1 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

26.2 ns, 35 ns

Typical Turn-On Delay Time:

3.5 ns, 3.5 ns

Unit Weight:

0.002610 oz

Tags

ZXMC4559DN8, ZXMC4559D, ZXMC45, ZXMC4, ZXMC, ZXM