PartNumber | ZXMHC10A07N8TC | ZXMHC10A07T8TA | ZXMHC10A07T8TC |
Description | MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9 | MOSFET 100V 1.4A N-Channel MOSFET H-Bridge | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SM-8 | - |
Number of Channels | 4 Channel | 4 Channel | - |
Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 1 A, 850 mA | 1.1 A | - |
Rds On Drain Source Resistance | 700 mOhms, 1.45 Ohms | 700 mOhms, 1 Ohms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 2.9 nC, 3.5 nC | 2.9 nC, 3.5 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 870 mW | 1.3 W | - |
Configuration | Quad | Quad | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Series | ZXMHC10 | ZXMHC10 | - |
Transistor Type | 2 N-Channel, 2 P-Channel | 2 N-Channel, 2 P-Channel | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Forward Transconductance Min | 1.6 S, 1.2 S | 1.6 S, 1.2 S | - |
Fall Time | 2.1 ns, 3.3 ns | 2.1 ns, 3.3 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 1.5 ns, 2.1 ns | 1.5 ns, 2.1 ns | - |
Factory Pack Quantity | 2500 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 4.1 ns, 5.9 ns | 4.1 ns, 5.9 ns | - |
Typical Turn On Delay Time | 1.8 ns, 1.6 ns | 1.8 ns, 1.6 ns | - |
Unit Weight | 0.002610 oz | - | - |
Height | - | 1.6 mm | - |
Length | - | 6.7 mm | - |
Product | - | MOSFET Small Signal | - |
Width | - | 3.7 mm | - |