ZXMHC10A07N8TC

Mfr. #:: ZXMHC10A07N8TC
Manufacturer:: Diodes Incorporated
Description:: MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9
Lifecycle:: New from this manufacturer.
Datasheet:: ZXMHC10A07N8TC Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: ZXMHC10A07N8TC more Information

Product Attribute
Attribute Value

Manufacturer:: Diodes Incorporated

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 4 Channel

Transistor Polarity:: N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 1 A, 850 mA

Rds On - Drain-Source Resistance:: 700 mOhms, 1.45 Ohms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 2.9 nC, 3.5 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 870 mW

Configuration:: Quad

Channel Mode:: Enhancement

Packaging:: Reel

Series:: ZXMHC10

Transistor Type:: 2 N-Channel, 2 P-Channel

Brand:: Diodes Incorporated

Forward Transconductance - Min:: 1.6 S, 1.2 S

Fall Time:: 2.1 ns, 3.3 ns

Product Type:: MOSFET

Rise Time:: 1.5 ns, 2.1 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 4.1 ns, 5.9 ns

Typical Turn-On Delay Time:: 1.8 ns, 1.6 ns

Unit Weight:: 0.002610 oz

Tags: ZXMHC1, ZXMHC, ZXMH, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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ZXMHC10A07N8TC Description

***ure Electronics: ZXMHC10A07N8TC Series 100 V 1 O Dual N & P Ch Enhancement Mode MOSFET - SOIC-8

***ark: Mosfet, Dual, N/P-Ch, 100V, 0.8A Rohs Compliant: Yes |Diodes Inc. ZXMHC10A07N8TC

***nsix Microsemi: Small Signal Field-Effect Transistor, 0.8A I(D), 100V, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: MOSFET, N-CH, 100V, 11.1A, SOIC-8; Transistor Polarity:N Channel; Continuous Dra

***(Formerly Allied Electronics): SI4056DY-T1-GE3 N-channel MOSFET Transistor; 11.1 A; 100 V; 8-Pin SOIC

***ure Electronics: Si4056DY Series 100 V 11.1 A 900 pF Surface Mount N-Channel Mosfet - SOIC-8

***nell: MOSFET, N-CH, 100V, 11.1A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited

***nsix Microsemi: Small Signal Field-Effect Transistor, 7.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***(Formerly Allied Electronics): IRF7490PBF N-channel MOSFET Transistor; 5.4 A; 100 V; 8-Pin SOIC

***ark: Mosfet Transistor, N Channel, 5.4 A, 100 V, 39 Mohm, 10 V, 4 V

***ure Electronics: Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 100V 5.4A 8-Pin SOIC T/R - Tape and Reel

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***nell: MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 39 / Gate-Source Voltage V = 20 / Fall Time ns = 11 / Rise Time ns = 4.2 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***(Formerly Allied Electronics): MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 22Milliohms; ID 6.9A; SO-8; PD 2.5W; VGS +/-20

***ure Electronics: IRF7473PbF Series N-Channel 100 V 26 mOhm 2.5 W HEXFET Power MOSFET - SOIC-8

***Yang: Trans MOSFET N-CH 100V 6.9A 8-Pin SOIC T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Source Voltage Vds:100V; On Resistance Rds(on):0.026ohm;

***icontronic: Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.9A; Fall Time tf: 11ns; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 55A; Rise Time: 20ns; Termination Type: Surface Mount Device; Voltage Vgs Max: 20V

***ponent Sense: Single N-Channel 100 V 2.5 W 34 nC Hexfet Power Mosfet Surface Mount - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC Tube / MOSFET N-CH 100V 7.3A 8-SOIC

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***roFlash: Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.3A; On Resistance Rds(On):0.018Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***(Formerly Allied Electronics): SI4100DY-T1-E3 N-channel MOSFET Module, 6.8 A, 100 V, 8-Pin SOIC

***et: Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R

***ure Electronics: N-CH MOSFET SO-8 100V 63MOHM @ 10V

***nsix Microsemi: Power Field-Effect Transistor, 4.4A I(D), 100V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ponent Sense: TRA FET SIG (MOSFET N 100V/6,8

***hard Electronics: VISHAY SI7456DDP-T1-GE3 MOSFET Transistor, N Channel, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V

*** Source Electronics: MOSFET N-CH 100V 27.8A PPAK SO-8 / Trans MOSFET N-CH 100V 27.8A 8-Pin PowerPAK SO T/R

***nell: MOSFET, N-CH, 100V, 27.8A, PP SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:27.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

ZXMHC10A07N8TC More Information

ZXMH MOSFET H-Bridge Series: Diodes Incorporated ZXMH MOSFET H-Bridge series is a new generation complementary MOSFET H-Bridge featuring low on-resistance achievable with low gate drive. Diodes Incorporated ZXMH MOSFET H-Bridge devices feature 2 x N + 2 x P channels in a SOIC package and low voltage (Vgs = 4.5V) gate drive. Diodes Incorporated ZXMH MOSFET H-Bridge devices are ideal for DC motor control and DC-AC inverter applications.

Market price

Part #	Mfg.	Description	Stock	Price
ZXMHC10A07N8TC DISTI # V72:2272_06708045	Zetex / Diodes Inc	Trans MOSFET N/P-CH 100V 1A/0.85A Automotive 8-Pin SO T/R RoHS: Compliant	2449	1000:$0.5018 500:$0.6397 250:$0.6546 100:$0.7274 25:$0.8751 10:$1.0696 1:$1.2416
ZXMHC10A07N8TC DISTI # V36:1790_06708045	Zetex / Diodes Inc	Trans MOSFET N/P-CH 100V 1A/0.85A Automotive 8-Pin SO T/R RoHS: Compliant	0	2500000:$0.4077 1250000:$0.4080 250000:$0.4345 25000:$0.4820 2500:$0.4900
ZXMHC10A07N8TC DISTI # ZXMHC10A07N8DICT-ND	Diodes Incorporated	MOSFET 2N/2P-CH 100V 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9132In Stock	1000:$0.5407 500:$0.6850 100:$0.8292 10:$1.0630 1:$1.1900
ZXMHC10A07N8TC DISTI # ZXMHC10A07N8DIDKR-ND	Diodes Incorporated	MOSFET 2N/2P-CH 100V 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9132In Stock	1000:$0.5407 500:$0.6850 100:$0.8292 10:$1.0630 1:$1.1900
ZXMHC10A07N8TC DISTI # ZXMHC10A07N8DITR-ND	Diodes Incorporated	MOSFET 2N/2P-CH 100V 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	5000:$0.4655 2500:$0.4900
ZXMHC10A07N8TC DISTI # 30883487	Zetex / Diodes Inc	Trans MOSFET N/P-CH 100V 1A/0.85A Automotive 8-Pin SO T/R RoHS: Compliant	2449	15:$1.2416
ZXMHC10A07N8TC DISTI # ZXMHC10A07N8TC	Diodes Incorporated	Trans MOSFET N/P-CH 100V 1A/0.85A 8-Pin SO T/R - Tape and Reel (Alt: ZXMHC10A07N8TC) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4469 15000:$0.4559 10000:$0.4779 5000:$0.5019 2500:$0.5269
ZXMHC10A07N8TC DISTI # ZXMHC10A07N8TC	Diodes Incorporated	Trans MOSFET N/P-CH 100V 1A/0.85A 8-Pin SO T/R (Alt: ZXMHC10A07N8TC) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.4089 15000:€0.4279 10000:€0.4349 5000:€0.4419 2500:€0.4649
ZXMHC10A07N8TC DISTI # 70438800	Diodes Incorporated	MOSFET Dual N/P-Ch 100V 1A/0.85A SOIC8 RoHS: Compliant	0	25:$0.8800 125:$0.7800 500:$0.7000 2500:$0.6400
ZXMHC10A07N8TC DISTI # 522-ZXMHC10A07N8TC	Diodes Incorporated	MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9 RoHS: Compliant	9336	1:$1.1400 10:$0.9800 100:$0.7530 500:$0.6660 1000:$0.5250
ZXMHC10A07N8TC DISTI # 7515332P	Zetex / Diodes Inc	MOSFET DUAL N/P-CH 100V 1A/0.85A SOIC8, RL	970	50:£0.3340
ZXMHC10A07N8TC DISTI # ZXMHC10A07N8TC	Diodes Incorporated	Transistor: N/P-MOSFET x2,unipolar,complementary,100/-100V	2498	500:$0.5500 100:$0.6000 25:$0.6500 5:$0.7400 1:$0.8300

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ZXMHC10A07N8TC

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes