ZXMHC1

ZXMHC10A07N8TC vs ZXMHC10A07T8TA vs ZXMHC10A07T8TC

 
PartNumberZXMHC10A07N8TCZXMHC10A07T8TAZXMHC10A07T8TC
DescriptionMOSFET Mosfet H-Bridge 100/-100 1.1/-0.9MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SM-8-
Number of Channels4 Channel4 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current1 A, 850 mA1.1 A-
Rds On Drain Source Resistance700 mOhms, 1.45 Ohms700 mOhms, 1 Ohms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge2.9 nC, 3.5 nC2.9 nC, 3.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation870 mW1.3 W-
ConfigurationQuadQuad-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesZXMHC10ZXMHC10-
Transistor Type2 N-Channel, 2 P-Channel2 N-Channel, 2 P-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min1.6 S, 1.2 S1.6 S, 1.2 S-
Fall Time2.1 ns, 3.3 ns2.1 ns, 3.3 ns-
Product TypeMOSFETMOSFET-
Rise Time1.5 ns, 2.1 ns1.5 ns, 2.1 ns-
Factory Pack Quantity25001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time4.1 ns, 5.9 ns4.1 ns, 5.9 ns-
Typical Turn On Delay Time1.8 ns, 1.6 ns1.8 ns, 1.6 ns-
Unit Weight0.002610 oz--
Height-1.6 mm-
Length-6.7 mm-
Product-MOSFET Small Signal-
Width-3.7 mm-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMHC10A07N8TC MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9
ZXMHC10A07T8TA MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
ZXMHC10A07N8TC Trans MOSFET N/P-CH 100V 1A/0.85A Automotive 8-Pin SO T/R
ZXMHC10A07T8TC New and Original
ZXMHC10A07T8TA Darlington Transistors MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
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