Nexperia's double transistors with low saturation voltage in a 2 mm x 2 mm DFN package are space-saving devices for power management and load switches.
Date: 2017-08-08
Nexperia's P-channel enhancement mode field-effect transistor (FET) in a 4 bumps wafer-level, chip-size package (WLCSP).
Date: 2017-02-03
Nexperia’s Mini Logic portfolio comprises single-, dual-, and triple-gate functions, that can be selected by the user, in small 5-, 6-, 8-, or 10-pin packages.
Date: 2015-11-19
Nexperia's dual, N-channel, enhancement-mode FET in a lead-free, ultra-small, DFN1010B-6 (SOT1216), SMD, plastic package using trench MOSFET technology.
Date: 2015-09-24
Nexperia offers their PNP / PNP, high-power, matched, double-bipolar transistor in a SOT1205 (LFPAK56D), surface-mounted device (SMD), power plastic package.
Date: 2015-09-21
Nexperia expands their 30 V NextPowerS3 MOSFETs with high performance SchottkyPlus technology, the first MOSFET with an integrated Schottky or Schottky-like diode.
Date: 2014-04-11
Nexperia offers unique benefits to meet all your automotive design needs. The Q100 portfolio covers logic functions for control, display, interface, and I/O expansion.
Date: 2013-09-25
Nexperia's high-performance, low RDS(on) MOSFETs address the trends towards higher efficiency, increased power density, and lower power consumption.
Date: 2013-09-13
Nexperia presents the PBSM5240PF, measuring only 2x2mm and a height of only 0.65mm designed to fit the trend of miniaturization of high performance products.
Date: 2013-07-02