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BUK7107-55ATE,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BUK7107-55ATE_2
© NXP B.V
. 2009. All rights rese
rved.
Product data sheet
Rev
. 02 — 19 February 2009
6 of 15
NXP Semiconductors
BUK7107-55A
TE
N-channel T
renchPLUS st
andard level FET
6.
Characteristics
T
able 6.
Characteristics
Symbol
Parameter
Conditions
Min
Ty
p
Max
Unit
St
atic characteris
tics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0
.
2
5m
A
;
V
GS
=0V
;
T
j
=2
5°
C
5
5
-
-
V
I
D
=0
.
2
5m
A
;
V
GS
=0V
;
T
j
=-
5
5°
C
5
0
-
-
V
V
GS(th)
gate-source threshold
voltage
I
D
=1m
A
;
V
DS
= V
GS
; T
j
=2
5°
C
;
see
Figure 9
234V
I
D
=1m
A
;
V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 9
1-
-
V
I
D
=1m
A
;
V
DS
= V
GS
; T
j
=-
5
5°
C
;
see
Figure 9
--4
.
4
V
I
DSS
drain leakage current
V
DS
=5
5V
;
V
GS
=0V
;
T
j
=2
5°
C
-
0
.
1
1
0
µ
A
V
DS
=5
5V
;
V
GS
=0V
;
T
j
= 175 °C
-
-
2
50
µA
V
(BR)GSS
gate-sourc
e breakdown
voltage
I
G
= 1 mA; -55 °C < T
j
< 175 °C
20
22
-
V
I
G
=-
1m
A
;
-
5
5
°
C
<
T
j
< 175 °C
20
22
-
V
I
GSS
gate leakage current
V
DS
=0V
;
V
GS
=1
0V
;
T
j
= 25 °C
-
22
1000
nA
V
DS
=0V
;
V
GS
=-
1
0V
;
T
j
= 25 °C
-
22
1000
nA
V
DS
=0V
;
V
GS
=1
0V
;
T
j
=
1
7
5
°
C
--1
0
µ
A
V
DS
=0V
;
V
GS
=-
1
0V
;
T
j
=
1
7
5
°
C
--1
0
µ
A
R
DSon
drain-source on-state
resistance
V
GS
=1
0V
;
I
D
=5
0A
;
T
j
=2
5°
C
;
see
Figure 7
; see
Figure 8
-5
.
8
7
m
Ω
V
GS
=1
0V
;
I
D
=5
0A
;
T
j
= 175 °C;
see
Figure 7
; see
Figure 8
--1
4
m
Ω
V
F(TSD)
temperature sense
diode forward voltage
I
F
= 250 µA; T
j
= 25 °C
648
658
668
mV
S
F(TSD)
temperature sense
diode temperature
coefficient
I
F
= 250 µA; T
j
< 175 °C; T
j
> -55 °C
-1.4
-1.54
-1.68
mV/K
V
F(TSD)hys
temperature sense
diode forward voltage
hysteresis
125 µA < I
F
< 250 µA; T
j
=2
5°
C
2
5
3
2
5
0
m
V
Dynamic ch
aracteri
stics
Q
G(tot)
total gate charge
I
D
=2
5A
;
V
DS
=4
4V
;
V
GS
=1
0V
;
see
Figure 14
-1
1
6
-n
C
Q
GS
gate-source charge
-
19
-
nC
Q
GD
gate-drain charge
-
50
-
nC
C
iss
input capacitance
V
GS
=0V
;
V
DS
=2
5V
;
f=1M
H
z
;
T
j
=2
5°
C
;
s
e
e
Figure 12
-
4500
-
pF
C
oss
output capacitance
-
960
-
pF
C
rss
reverse transfer
capacit
ance
-
510
-
pF
t
d(on)
turn-on delay time
V
DS
=3
0V
;
R
L
=1
.
2
Ω
; V
GS
=1
0V
;
R
G(ext)
10
Ω
-3
6
-n
s
t
r
rise time
-
1
15
-
ns
t
d(off
)
turn-off delay time
-
159
-
ns
t
f
fall time
-
1
1
1
-
ns
BUK7107-55ATE_2
© NXP B.V
. 2009. All rights rese
rved.
Product data sheet
Rev
. 02 — 19 February 2009
7 of 15
NXP Semiconductors
BUK7107-55A
TE
N-channel T
renchPLUS st
andard level FET
L
D
internal drain
induct
ance
from upper edge of drain mounting
base to
center of die
-2
.
5
-n
H
L
S
internal source
induct
ance
from source lead to source bond pad
-
7.5
-
nH
Source-drain di
ode
V
SD
source-drain voltage
I
S
=2
5A
;
V
GS
=0V
;
T
j
=2
5°
C
;
see
Figure 17
-
0.85
1.2
V
t
rr
reverse recovery time
I
S
=2
0A
;
d
I
S
/dt = -100 A/
µs; V
GS
=-
1
0V
;
V
DS
=3
0V
-8
0
-n
s
Q
r
recovered charge
-
200
-
nC
T
able 6.
Characteristics
…continued
Symbol
Parameter
Conditions
Min
Ty
p
Max
Unit
BUK7107-55ATE_2
© NXP B.V
. 2009. All rights rese
rved.
Product data sheet
Rev
. 02 — 19 February 2009
8 of 15
NXP Semiconductors
BUK7107-55A
TE
N-channel T
renchPLUS st
andard level FET
Fig 5.
Outp
ut characteristics: dra
in current as a
function of drain-source volta
ge; typical values
Fig 6.
Drain-sour
ce on-state resistance as a function
of gate-source voltage; typical value
s
Fig 7.
Drain-sour
ce on-state re
sistance as
a function
of drain current; typical values
Fig 8.
Norma
lized drain-source o
n-state resistance
factor as a function of junction temperature
03ni65
0
100
200
300
400
02468
1
0
V
DS
(V)
(A)
4.5
5.5
6.5
7.5
20
12
7
6
8
V
GS
(V) =
4
8.5
10
I
D
03ni66
4
5
6
7
8
5
1
01
52
0
V
GS
(V
)
R
DSon
(m
Ω
)
03ni67
0
2
4
6
8
10
12
0
20
40
60
80
100
120
I
D
(A)
R
DSon
(m
Ω
)
7
8
6
10
6.5
V
GS
(V) = 5.5
03ne89
0
0.
5
1
1.
5
2
-
60
0
60
120
180
T
j
(
°
C)
a
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BUK7107-55ATE,118
Mfr. #:
Buy BUK7107-55ATE,118
Manufacturer:
Nexperia
Description:
MOSFET TRENCHPLUS MOSFET
Lifecycle:
New from this manufacturer.
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