0,01 0,1 1
400
600
800
1000
0,4 0,8 1,2 1,6
0
20
40
60
80
100
10
0
10
1
10
2
10
3
10
4
0,0
0,1
0,2
0,3
0,4
I
TSM
[A]
I
T
[A]
V
T
[V]
t [ms]
Z
thJC
[K/W]
2 3 4 5 6 7 8 9 011
1000
10000
I
2
t
[A
2
s]
t [ms]
I
T(AV)M
[A]
T
C
[°C]
0 25 50 75 100 125 150
0
20
40
60
80
100
Fig. 1 Forward characteristics
Fig. 3 I
2
t versus time (1-10 ms)
t [s]
Fig. 6 Max. forward current
at case temperature
Fig. 2 Surge overload current
Fig. 8 Transient thermal impedance junction to case
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
125°C
150°C
0 20 40 60
0
20
40
60
80
100
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
10 100 1000
1
10
100
1000
1 10 100 1000 10000
0,1
1
10
I
G
[mA]
V
G
t
gd
[µs]
I
G
[mA]
typ.
Limit
T
VJ
= 125°C
Fig. 4 Gate trigger characteristics
Fig. 5 Gate controlled delay time
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
dc =
1
0.5
0.4
0.33
0.17
0.08
6
4
5
2
1
3
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
1: I
GD
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
R
thi
[K/W] t
i
[s]
0.041 0.008
0.043 0.0001
0.039 0.04
0.076 0.57
0.121 0.37
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20150827bData according to IEC 60747and per semiconductor unless otherwise specified
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