ZXTC4591AMCTA Datasheet ZXTC4591AMCTA | P4-P6

ZXTC4591AMC

Document number: DS31925 Rev. 4 - 2

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October 2012

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ZXTC4591AMC

NPN - Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

BV

CBO

40 - - V

I

C

= 100µA

Collector-Emitter Breakdown Voltage (Note 12)

BV

CEO

40 - - V

I

C

= 10mA

Emitter-Base Breakdown Voltage

BV

EBO

7 - - V

I

E

= 100µA

Collector Cutoff Current

I

CBO

- - 100 nA

V

CB

= 30V

Emitter Cutoff Current

I

EBO

- - 100 nA

V

EB

= 4V

Collector Emitter Cutoff Current

I

CES

- - 100 nA

V

CE

= 30V

Static Forward Current Transfer Ratio (Note 12)

h

FE

300

200

35

-

900

-

I

C

= 1mA, V

CE

= 5V

I

C

= 500mA, V

CE

= 5V

I

C

= 1A, V

CE

= 5V

I

C

= 2A, V

CE

= 5V

Collector-Emitter Saturation Voltage (Note 12)

V

CE(sat)

-

300

500

mV

I

C

= 0.5A, I

B

= 50mA

I

C

= 1A, I

B

= 100mA

Base-Emitter Turn-On Voltage (Note 12)

V

BE

(

on

)

- - 1.0 V

I

C

= 1A, V

CE

= 5V

Base-Emitter Saturation Voltage (Note 12)

V

BE

(

sat

)

- - 1.1 V

I

C

= 1A, I

B

= 100mA

Output Capacitance

C

obo

- - 10 pF

V

CB

= 10V, f = 1MHz

Transition Frequency

f

T

150 - - MHz

V

CE

= 10V, I

C

= 50mA,

f = 100MHz

Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

ZXTC4591AMC

Document number: DS31925 Rev. 4 - 2

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October 2012

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ZXTC4591AMC

NPN - Typical Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

1m 10m 100m 1

10m

100m

1

0123

0.0

0.2

0.4

0.6

0.8

1m 10m 100m 1

0

200

400

600

800

1000

1200

1m 10m 100m 1

0.4

0.6

0.8

1.0

1.2

1m 10m 100m 1

0.2

0.4

0.6

0.8

1.0

1.2

I

C

/I

B

=50

I

C

/I

B

=100

V

CE(SAT)

v I

C

Tamb=25°C

I

C

/I

B

=20

I

C

/I

B

=10

V

CE(SAT)

(V)

I

C

Collector Current (A)

150°C

V

BE(SAT)

v I

C

I

C

/I

B

=10

100°C

25°C

-55°C

V

CE(SAT)

(V)

I

C

Collector Current (A)

150°C

h

FE

v I

C

V

CE

=5V

-55°C

25°C

100°C

Gain

I

C

Collector Current (A)

150°C

25°C

V

CE(SAT)

v I

C

I

C

/I

B

=10

100°C

-55°C

V

BE(SAT)

(V)

I

C

Collector Current (A)

150°C

V

BE(ON)

v I

C

V

CE

=5V

100°C

25°C

-55°C

V

BE(ON)

(V)

I

C

Collector Current (A)

ZXTC4591AMC

Document number: DS31925 Rev. 4 - 2

6 of 9

www.diodes.com

October 2012

A

Product Line o

f

Diodes Incorporated

ZXTC4591AMC

PNP - Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

BV

CBO

-40 - - V

I

C

= -100µA

Collector-Emitter Breakdown Voltage (Note 12)

BV

CEO

-40 - - V

I

C

= -10mA

Emitter-Base Breakdown Voltage

BV

EBO

-7 - - V

I

E

= -100µA

Collector Cutoff Current

I

CBO

- - -100 nA

V

CB

= -30V

Emitter Cutoff Current

I

EBO

- - -100 nA

V

EB

= -4V

Collector Emitter Cutoff Current

I

CES

- - -100 nA

V

CE

= -30V

Static Forward Current Transfer Ratio (Note 12)

h

FE

300

250

160

30

-

800

-

I

C

= -1mA, V

CE

= -5V

I

C

= -100mA, V

CE

= -5V

I

C

= -500mA, V

CE

= -5V

I

C

= -1A, V

CE

= -5V

I

C

= -2A, V

CE

= -5V

Collector-Emitter Saturation Voltage (Note 12)

V

CE(sat)

-

-200

-350

-500

mV

I

C

= -0.1A, I

B

= -1mA

I

C

= -0.5A, I

B

= -20mA

I

C

= -1.0A, I

B

= -100mA

Base-Emitter Turn-On Voltage (Note 12)

V

BE

(

on

)

- - -1.0 V

I

C

= -1A, V

CE

= -5V

Base-Emitter Saturation Voltage (Note 12)

V

BE

(

sat

)

- - -1.1 V

I

C

= -1A, I

B

= -50mA

Output Capacitance

C

obo

- - 10 pF

V

CB

= -10V, f = 1MHz

Transition Frequency

f

T

150 - - MHz

V

CE

= -10V, I

C

= -50mA,

f = 100MHz

Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

ZXTC4591AMCTA

ZXTC4591AMCTA

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