BUK664R6-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 17 November 2010 7 of 14
NXP Semiconductors
BUK664R6-40C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 16
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=25V
-42-ns
Q
r
recovered charge - 65 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 6. Forward transconductance as a function of
drain current; typical values
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Fig 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae319
0
20
40
60
80
100
0246
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
003aae320
0
20
40
60
80
100
0 20406080
I
D
(A)
g
fs
(S)
003aae323
0
5
10
15
20
0 5 10 15 20
V
GS
(V)
R
DSon
(m
Ω
)
003aae318
0
25
50
75
100
00.511.52
V
DS
(V)
I
D
(A)
V
GS
(V) = 4
3.4
3.6
3.8
10.0 4.55.0
3.2