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SPP08P06PHXKSA1

P1-P3P4-P6P7-P9P10-P10
2011-08-31
Rev 1.6 Page 1
SPP08P06P H
SIPMOS
Power-Transistor
Features
P-Channel
Enhancement mode
Avalanche rated
d
v
/d
t
rated
175°C operating temperature
Product Summary
Drain source voltage
V
V
DS
-60
Drain-source on-state resistance
R
DS(on)
0.3
Continuous drain current A
I
D
-8.8
Type Package
SPP08P06P H PG-TO220-3
Pin 1 PIN 2/4 PIN 3
G D S
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol UnitValue
-8.8
-6.2
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
A
I
D
Pulsed drain current
T
C
= 25 °C
I
D puls
-35.2
Avalanche energy, single pulse
I
D
= -8.8 A ,
V
DD
= -25 V,
R
GS
= 25
70 mJ
E
AS
Avalanche energy, periodic limited by
T
jmax
E
AR
4.2
d
v
/d
t
6Reverse diode d
v
/d
t
I
S
= -8.8 A,
V
DS
= -48 , d
i
/d
t
= 200 A/µs,
T
jmax
= 175 °C
kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
T
C
= 25 °C
P
tot
42 W
Operating and storage temperature
T
j
,
T
stg
-55...+175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
°
Halogen-free according to IEC61249-2-21
°
Qualified according to AEC Q101
• Pb-free lead plating; RoHS compliant
2011-08-31
Rev 1.6 Page 2
SPP08P06P H
Thermal Characteristics
Parameter
Symbol UnitValues
min. max.typ.
Characteristics
R
thJC
- 3.6-Thermal resistance, junction - case K/W
- 62
R
thJA
Thermal resistance, junction - ambient, leaded -
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
62
40
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= -250 µA
V
(BR)DSS
-60 - V-
Gate threshold voltage,
V
GS
=
V
DS
I
D
= -250 µA,
T
j
= 25 °C
-2.1 -3 -4
V
GS(th)
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 150 °C
µA
-1
-100
I
DSS
-0.1
-10
-
-
I
GSS
- -10 -100Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
nA
Drain-source on-state resistance
V
GS
= -10 V,
I
D
= -6.2 A
R
DS(on)
- 0.23 0.3
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2011-08-31
Rev 1.6 Page 3
SPP08P06P H
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= -6.2 A
1.5
g
fs
S-3.6
Input capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
C
iss
335 420 pF-
C
oss
- 135105Output capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
9565
C
rss
-
Turn-on delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -6.2 A,
R
G
= 6
- 24 ns16
t
d(on)
Rise time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -6.2 A,
R
G
= 6
t
r
- 6946
48 72
t
d(off)
Turn-off delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -6.2 A,
R
G
= 6
-
Fall time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -6.2 A,
R
G
= 6
t
f
- 14 21
P1-P3P4-P6P7-P9P10-P10

SPP08P06PHXKSA1

Mfr. #:
Buy SPP08P06PHXKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -60V -8.8A TO220-3
Lifecycle:
New from this manufacturer.
Delivery:
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