HMC5457MS8GETR

11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT - SMT
11 - 2
HMC5457MS8GE
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
v00.0808
General Description
Features
Functional Diagram
Input P1dB: +40 dBm @ Vdd = +8V
High Third Order Intercept: +62 dBm
Positive Control: +3 to +10V
Low Insertion Loss: 0.4 dB
MSOP8G Package: 14.8 mm
2
Electrical Speci cations,
T
A
= +25° C, Vctl = 0/Vdd, Vdd = +8V (Unless Otherwise Stated), 50 Ohm System
Typical Applications
The HMC5457MS8GE is ideal for:
• Cellular / 4G Infrastructure
• WiMAX, WiBro & Fixed Wireless
• Automotive Telematics
• Mobile Radio
• Test Equipment
The HMC5457MS8GE is a high power SPDT switch in
an 8-lead MSOPG package for use in transmit-rece-
ive applications which require very low distortion at
high input signal power levels. The device can control
signals from DC to 4 GHz. The design provides excep-
tional intermodulation performance; > +60 dBm third
order intercept at +8V bias. RF1 and RF2 are re ec-
tive shorts whenOFF”. On-chip circuitry allows single
positive supply operation from +3 Vdc to +10 Vdc at
very low DC current with control inputs compatible
with CMOS logic families.
Parameter Frequency Min. Typ. Max. Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.4
0.6
0.8
0.9
1.3
0.6
0.8
1.1
1.3
2.0
dB
dB
dB
dB
dB
Isolation DC - 4.0 GHz 26 30 dB
Return Loss (On State)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
35
30
20
10
dB
dB
dB
dB
Input Power for 0.1dB Compression
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.1 - 4.0 GHz
32
37
38
dBm
dBm
dBm
Input Power for 1dB Compression
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.1 - 4.0 GHz
32
35
38
35
38
41
dBm
dBm
dBm
Input Third Order Intercept
(Two-tone input power = +30 dBm each tone)
0.02 - 0.1 GHz
0.1 - 2.0 GHz
0.1 - 3.0 GHz
0.1 - 4.0 GHz
47
64
63
63
dBm
dBm
dBm
dBm
Switching Characteristics
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
15
40
ns
ns
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT - SMT
11 - 3
Insertion Loss vs. Temperature Isolation
Return Loss RF1 to RF2 Isolation
Insertion Loss vs. Vdd Isolation vs. Vdd
HMC5457MS8GE
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
-50
-40
-30
-20
-10
0
0123456
RF1 ON RF2 OFF
RF1 OFF RF2 ON
RF1 OFF RF2 OFF
ISOLATION (dB)
FREQUENCY (GHz)
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT - SMT
11 - 4
Input P1dB vs. Vdd
Input P0.1dB vs. Vdd
Input P1dB vs. Temperature @ Vdd = +5V
HMC5457MS8GE
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Input IP3 vs. Tone Power @ Vdd = +5V
Input IP3 vs. Tone Power @ Vdd = +8V
Input IP3 vs. Tone Power @ Vdd = +3V

HMC5457MS8GETR

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
IC RF SWITCH SPDT 4GHZ 8MSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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