MMT08B260T3G

© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1 Publication Order Number:
MMT08B260T3/D
MMT08B260T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
High Surge Current Capability: 80 Amps 10 x 1000 msec, for
Controlled Temperature Environments
The MMT08B260T3 is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Registered − File #E210057
Pb−Free Package is Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Off−State Voltage − Maximum V
DM
±200 V
Maximum Pulse Surge Short Circuit Current
Non−Repetitive
Double Exponential Decay Waveform
(−25°C Initial Temperature) (Notes 1 & 2)
2 x 10 msec
8 x 20 msec
10 x 160 msec
10 x 360 msec
10 x 560 msec
10 x 700 msec
10 x 1000 msec
I
PPS1
I
PPS2
I
PPS3
I
PPS4
I
PPS5
I
PPS6
I
PPS7
±250
±250
±150
±150
±100
±100
±80
A(pk)
Non−Repetitive Peak On−State Current
60 Hz Full Sign Wave
I
TSM
32 A(pk)
Maximum Non−Repetitive Rate of Change of
On−State Current Exponential Waveform,
I
pk
< 100A
di/dt ±300
A/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
BIDIRECTIONAL TSPD
80 AMP SURGE, 260 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MMT08B260T3 SMB 2500 Tape & Reel
MT1 MT2
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
(
)
A = Assembly Location
Y = Year
WW = Work Week
RPCG = Device Code
G = Pb−Free Package
MARKING DIAGRAM
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMT08B260T3G SMB
(Pb−Free)
2500 Tape & Reel
(Note: Microdot may be in either location)
AYWW
RPCG G
G
MMT08B260T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Operating Temperature Range Blocking or Conducting State T
J1
40 to +125 °C
Overload Junction Temperature − Maximum Conducting State Only T
J2
+175 °C
Instantaneous Peak Power Dissipation (I
pk
= 50 A, 10x1000 msec @ 25°C)
P
PK
2000 W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
forward and reverse polarities.
Characteristics Symbol Min Typ Max Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ms, I
SC
= 1.0 A, Vdc = 1000 V)
(+65°C)
V
(BO)
320
340
V
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
R
I
= 1.0 kW, t = 0.5 cycle) (Note 3)
(+65°C)
V
(BO)
320
340
V
Breakover Voltage Temperature Coefficient dV
(BO)
/dT
J
0.08 %/°C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities V
(BR)
260 V
Off State Current (V
D1
= 50 V) Both polarities
Off State Current (V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
mA
On−State Voltage (I
T
= 1.0 A)
(PW 300 ms, Duty Cycle 2%) (Note 3)
V
T
1.53 3.0 V
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 kW)
Both polarities
I
BO
230 mA
Holding Current (Both polarities) (Note 3)
V
S
= 500 Volts; I
T
(Initiating Current) = "1.0 Amp
I
H
150
300
mA
Critical Rate of Rise of Off−State Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25°C)
dv/dt 2000
V/ms
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 mV rms Signal)
C
O
25
50
30
55
pF
3. Measured under pulse conditions to reduce heating.
+ Current
+ Voltage
V
TM
V
(BO)
I
(BO)
I
D2
I
D1
V
D1
V
D2
V
(BR)
I
H
Symbol Parameter
I
D1
, I
D2
Off State Leakage Current
V
D1
, V
D2
Off State Blocking Voltage
V
BR
Breakdown Voltage
V
BO
Breakover Voltage
I
BO
Breakover Current
I
H
Holding Current
V
TM
On State Voltage
Voltage Current Characteristic of TSPD
(Bidirectional Device)
MMT08B260T3
http://onsemi.com
3
Figure 1. Off−State Current versus Temperature
TEMPERATURE (°C)
140120100806040200
100
10
1
0.1
0.01
I
D1
, OFF−STATE CURRENT ( A)
Figure 2. Breakdown Voltage versus Temperatur
e
TEMPERATURE (°C)
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
V
D1
= 50V
100500−50 125
320
300
280
260
240
220
200
180
160
340
μ
75−25 25
Figure 3. Breakover Voltage versus Temperature Figure 4. Holding Current versus Temperature
TEMPERATURE (°C)
1000
100500−50 125
100
200
300
400
500
600
700
800
900
I
H
, HOLDING CURRENT (mA)
V
BO
, BREAKOVER VOLTAGE (VOLTS)
TEMPERATURE (°C)
100500−50 125
360
340
320
300
280
260
240
220
200
380
TIME (sec)
100100.10.010.001
100
10
1
CURRENT (A)
1
Figure 5. Exponential Decay Pulse Waveform
TIME (ms)
0
50
0
Ipp − PEAK PULSE CURRENT − %Ipp
100
t
r
= rise time to peak value
t
f
= decay time to half value
t
r
t
f
Peak
Value
Half Value
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
7525−25
25
7525

MMT08B260T3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Thyristor Surge Protection Devices (TSPD) 80A Surge 260V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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