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CY7C199C-12ZXCT

P1-P3P4-P6P7-P9P10-P12P13-P13
256K (32K x 8) Static RAM
CY7C199C
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 38-05408 Rev. *C Revised August 3, 2006
Features
• Fast access time: 12 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed/power
• TTL–compatible Inputs and Outputs
• 2.0V Data Retention
• Low CMOS standby power
• Automated Power-down when deselected
• Available in Pb-free and non Pb-free 28-pin (300-Mil)
Molded SOJ, 28-pin (300-Mil) DIP and 28-pin TSOP I
packages
General Description
The CY7C199C is a high-performance CMOS Asynchronous
SRAM organized as 32K by 8 bits that supports an
asynchronous memory interface. The device features an
automatic power-down feature that significantly reduces
power consumption when deselected.
See the Truth Table in this data sheet for a complete
description of read and write modes
Product Portfolio
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Row Decoder
RAM Array
Column Decoder
Input Buffer
Sense Amps
A
X
Power
Down
Circuit
I/Ox
OE
WE
CE
X
Logic Block Diagram
32K x 8
ARRAY
12 ns 15 ns 20 ns Unit
Maximum Access Time 12 15 20 ns
Maximum Operating Current 85 80 75 mA
Maximum CMOS Standby Current (L) 500 µA
CY7C199C
Document #: 38-05408 Rev. *C Page 2 of 13
Pin Layout and Specifications
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
V
SS
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
A
0
OE
A
1
A
2
A
3
A
4
WE
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14 15
16
17
18
19
20
21
22
23
24
25
26
27
28
28 DIP (6.9 x 35.6 x 3.5 mm)
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
V
SS
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
A
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14 15
16
17
18
19
20
21
22
23
24
25
26
27
28
28 TSOP I (8 x 13.4 mm)
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
V
SS
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
A
0
OE
A
1
A
2
A
3
A
4
WE
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14 15
16
17
18
19
20
21
22
23
24
25
26
27
28
28 SOJ
CY7C199C
Document #: 38-05408 Rev. *C Page 3 of 13
Pin Description
Pin Type Description DIP SOJ TSOP I
A
X
Input Address Inputs 1, 2, 3, 4, 5, 6, 7, 8, 9, 10,
21, 23, 24, 25, 26
1, 2, 3, 4, 5, 6, 7, 8, 9, 10,
21, 23, 24, 25, 26
2, 3, 4, 5, 8, 9, 10, 11, 12,
13, 14, 15, 16, 17, 28
CE Control Chip Enable 20 20 27
I/O
X
Input or
Output
Data
Input/Outputs
11, 12, 13, 15, 16, 17,
18, 19
11, 12, 13, 15, 16, 17, 18,
19
18, 19, 20, 22, 23, 24, 25,
26
OE Control Output Enable 22 22 1
V
CC
Supply Power (5.0V) 28 28 7
V
SS
Supply Ground 14 14 21
WE Control Write Enable 27 27 6
Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.)
Parameter Description Value Unit
T
STG
Storage Temperature –65 to +150 °C
T
AMB
Ambient Temperature with Power Applied (i.e., case temperature) –55 to +125 °C
V
CC
Core Supply Voltage Relative to V
SS
–0.5 to +7.0 V
V
IN
, V
OUT
DC Voltage Applied to any Pin Relative to V
SS
–0.5 to V
CC
+ 0.5 V
I
OUT
Output Short-Circuit Current 20 mA
V
ESD
Static Discharge Voltage (per MIL-STD-883, Method 3015) > 2001 V
I
LU
Latch-up Current > 200 mA
Operating Range
Range Ambient Temperature (T
A
) Voltage Range (V
CC
)
Commercial 0°C to 70°C 5.0V ± 10%
Industrial –40°C to 85°C 5.0V ± 10%
DC Electrical Characteristics Over the Operating Range
[2]
Parameter Description Condition
12 ns 15 ns 20 ns
UnitMin. Max. Min. Max. Min. Max.
V
IH
Input HIGH Voltage 2.2 V
CC
+ 0.3 2.2 V
CC
+ 0.3 2.2 V
CC
+ 0.3 V
V
IL
Input LOW Voltage –0.5 0.8 –0.5 0.8 –0.5 0.8 V
V
OH
Output HIGH Voltage V
CC
= Min., I
OH
= –4.0 mA 2.4 2.4 2.4 V
V
OL
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA 0.4 0.4 0.4 V
I
IX
Input Leakage
Current
GND ≤ V
I
≤ V
CC
–5 +5 –5 +5 –5 +5 µA
I
OZ
Output Leakage
Current
GND ≤ V
I
≤ V
CC
, Output
Disabled
–5 +5 –5 +5 –5 +5 µA
I
CC
V
CC
Operating
Supply Current
V
CC
= Max., I
OUT
= 0 mA,
f = F
MAX
= 1/t
RC
85 80 75 mA
I
SB1
Automatic CE
Power-down Current
TTL Inputs
Max. V
CC
, CE ≥ V
IH
, V
IN
≥
V
IH
or V
IN
≤ V
IL
, f = F
MAX
30 30 30 mA
L 10 mA
I
SB2
Automatic CE
Power-down Current
CMOS Inputs
Max. V
CC
, CE ≥ V
CC
– 0.3V,
V
IN
≥ V
CC
– 0.3V, or V
IN
≤
0.3V, f = 0
10 10 10 mA
L 500 µA
Note:
2. V
IL
(min) = –2.0V for pulse durations of less than 20 ns.
P1-P3P4-P6P7-P9P10-P12P13-P13

CY7C199C-12ZXCT

Mfr. #:
Buy CY7C199C-12ZXCT
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 256K PARALLEL 28TSOP I
Lifecycle:
New from this manufacturer.
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