JDH3D01S
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01S
○ For wave detection
• Small package
Absolute Maximum Ratings
(Ta
=
25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics
(Ta
=
25°C)
Marking
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
Unit: mm
1 ｱﾉｰﾄﾞ1
2 ｶｿｰﾄﾞ2
3 ｶｿｰﾄﾞ1/ｱﾉｰﾄﾞ 2
JEDEC ―
JEITA ―
TOSHIBA 1-2S1C
Characteristic Symbol Rating Unit
Reverse voltage V
R
4 V
Forward current I
F
25 mA
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Characteristic Symbol Test Condition
Min Typ. Max Unit
Forward voltage V
F
I
F
= 2 mA ⎯ 0.25 ⎯ V
Forward current I
F
V
F
= 0.5 V 25 ⎯ ⎯ mA
Reverse current I
R
V
R
= 0.5 V ⎯ ⎯ 25 uA
Capacitance C
T
V
R
= 0.2 V, f = 1 MHz
⎯ 0.6 ⎯ pF
B H
Weight: 0.0024 g (typ.)
SSM 1. ANODE1
2. CATHODE2
3. CATHODE1/ANODE2
Start of commercial production
2003-10
