NTMFS08N2D5C
www.onsemi.com
4
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
Figure 3. Normalized On-Resistance vs.
Junction Temperature
Figure 4. On-Resistance vs. Gate to Source
Voltage
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
0
0
50
100
150
200
250
300
V
GS
= 4.5 V
V
GS
= 5.5 V
V
GS
= 10 V
V
GS
= 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 5 V
V
GS
= 7 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
12345 0
0
1
2
3
4
5
6
V
GS
= 10 V
V
GS
= 7 V
V
GS
= 4.5 V
V
GS
= 5.5 V
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 6 V
V
GS
= 5 V
50 100 150 200 250 300
−75
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
D
= 68 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
T
J
, JUNCTION TEMPERATURE (5C)
−50 −25 0 25 50 75 100 125 150
2
0
50
100
150
200
250
300
T
J
= 150
o
C
V
DS
= 5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
T
J
= −55
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
34567 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
300
T
J
= −55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
4
0
5
10
15
20
T
J
= 125
o
C
I
D
= 68 A
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON−RESISTANCE
(mW)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
5678910