NTMFS08N2D5C

NTMFS08N2D5C
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4
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
Figure 3. Normalized On-Resistance vs.
Junction Temperature
Figure 4. On-Resistance vs. Gate to Source
Voltage
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
0
0
50
100
150
200
250
300
V
GS
= 4.5 V
V
GS
= 5.5 V
V
GS
= 10 V
V
GS
= 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 5 V
V
GS
= 7 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
12345 0
0
1
2
3
4
5
6
V
GS
= 10 V
V
GS
= 7 V
V
GS
= 4.5 V
V
GS
= 5.5 V
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 6 V
V
GS
= 5 V
50 100 150 200 250 300
−75
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
D
= 68 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
T
J
, JUNCTION TEMPERATURE (5C)
−50 −25 0 25 50 75 100 125 150
2
0
50
100
150
200
250
300
T
J
= 150
o
C
V
DS
= 5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
T
J
= −55
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
34567 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
300
T
J
= −55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
4
0
5
10
15
20
T
J
= 125
o
C
I
D
= 68 A
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON−RESISTANCE
(mW)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
5678910
NTMFS08N2D5C
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5
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power
Dissipation
0 10203040506070
0
2
4
6
8
10
I
D
= 68 A
V
DD
= 50 V
V
DD
= 40 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
V
DD
= 30 V
0.1 1 10 80
1
10
100
1000
10000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.001 0.01 0.1 1 10 100 1000
1
10
100
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 100
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25
0
30
60
90
120
150
180
V
GS
= 6 V
R
qJC
= 0.9
o
C/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (5C)
50 75 100 125 150
0.1 1 10 100 500
0.1
1
10
100
1000
CURVE BENT TO
MEASURED DATA
10 ms
100 ms/DC
10 ms
1 ms
100 ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
qJC
= 0.9
o
C/W
T
C
= 25
o
C
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
100
1000
10000
100000
SINGLE PULSE
R
qJC
= 0.9
o
C/W
T
C
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
NTMFS08N2D5C
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6
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Figure 13. Junction-to-Case Transient Thermal Response Curve
10
−5
10
−4
10
−3
10
−2
10
−1
1
0.001
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE−DESCENDING ORDER
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
NOTES:
Z
qJC
(t) = r(t) x R
qJC
R
qJC
= 0.9
o
C/W
Duty Cycle, D = t
1
/ t
2
Peak T
J
= P
DM
x Z
qJC
(t) + T
C
P
DM
t
1
t
2

NTMFS08N2D5C

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 80V 166A POWER56
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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