SSM6N35FE,LM Datasheet SSM6N35FE,LM | P1-P3

SSM6N35FE

2014-03-01

1

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6N35FE

○ High-Speed Switching Applications

○ Analog Switch Applications

• 1.2-V drive

• N-ch 2-in-1

• Low ON-resistance: R

on

= 20 Ω (max) (@V

GS

= 1.2 V)

: R

on

= 8 Ω (max) (@V

GS

= 1.5 V)

: R

on

= 4 Ω (max) (@V

GS

= 2.5 V)

: R

on

= 3 Ω (max) (@V

GS

= 4.0 V)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristics Symbol Rating Unit

Drain–source voltage V

DSS

20 V

Gate–source voltage V

GSS

±10 V

DC I

D

180

Drain current

Pulse I

DP

360

mA

Drain power dissipation P

D

(Note 1) 150 mW

Channel temperature T

ch

150 °C

Storage temperature T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease

in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: Total rating

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm

2

× 6)

Marking Equivalent Circuit

(top view)

Unit: mm

0.2±0.05

6

1.2±0.05

1.6±0.05

1.0±0.05

1

2

0.50.5

3

1.6±0.05

5

4

0.12±0.05

0.55±0.05

JEDEC -

JEITA -

TOSHIBA 2-2N1A

Weight: 3.0 mg (typ.)

ES6

K Z

6 5 4

1 2 3

Q1

Q2

654

123

1.Source1

2.Gate1

3.Drain2

4.Source2

5.Gate2

6.Drain1

Start of commercial production

2008-02

SSM6N35FE

2014-03-01

2

Electrical Characteristics

(Ta

=

25°C) (Q1, Q2 Common)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

GSS

V

GS

= ±10 V, V

DS

= 0V ⎯ ⎯ ±10 μA

Drain–source breakdown voltage V

(BR) DSS

I

D

= 0.1 mA, V

GS

= 0V 20 ⎯ ⎯ V

Drain cutoff current I

DSS

V

DS

= 20 V, V

GS

= 0V ⎯ ⎯ 1 μA

Gate threshold voltage V

th

V

DS

= 3 V, I

D

= 1 mA 0.4 ⎯ 1.0 V

Forward transfer admittance ⏐Y

fs

⏐ V

DS

= 3 V, I

D

= 50 mA (Note 2) 115 ⎯ ⎯ mS

I

D

= 50 mA, V

GS

= 4 V (Note 2) ⎯ 1.5 3

I

D

= 50 mA, V

GS

= 2.5 V (Note 2) ⎯ 2 4

I

D

= 5 mA, V

GS

= 1.5 V (Note 2) ⎯ 3 8

Drain–source ON-resistance R

DS (ON)

I

D

= 5 mA, V

GS

= 1.2 V (Note 2) ⎯ 5 20

Ω

Input capacitance

C

iss

⎯ 9.5 ⎯

Reverse transfer capacitance

C

rss

⎯ 4.1 ⎯

Output capacitance

C

oss

V

DS

= 3 V, V

GS

= 0V, f = 1 MHz

⎯ 9.5 ⎯

pF

Turn-on time t

on

⎯ 115 ⎯

Switching time

Turn-off time t

off

V

DD

= 3 V, I

D

= 50 mA,

V

GS

= 0 to 2.5 V

⎯

300

⎯

ns

Drain–source forward voltage V

DSF

I

D

= - 180 mA, V

GS

= 0V (Note 2)

⎯ -0.9 -1.2 V

Note 2: Pulse test

Switching Time Test Circuit

(Q1, Q2 Common)

(a) Test Circuit (b) V

IN

Usage Considerations

Let V

th

be the voltage applied between gate and source that causes the drain current (I

D

)

to below (1 mA for the

SSM6N35FE). Then, for normal switching operation, V

GS(on)

must be higher than V

th,

and V

GS(off)

must be lower than

V

th.

This relationship can be expressed as: V

GS(off)

< V

th

< V

GS(on).

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

V

DD

= 3 V

Duty ≤ 1%

V

IN

: t

r

, t

f

< 5 ns

(Z

out

= 50 Ω)

Common Source

Ta = 25°C

V

DD

OUT

IN

2.5 V

0

10 μs

50 Ω

R

L

(c) V

OUT

t

on

90%

10%

0 V

2.5 V

10%

90%

t

off

t

r

t

f

V

DD

V

DS

(

ON

)

SSM6N35FE

2014-03-01

3

I

D

– V

DS

I

D

– V

GS

R

DS (ON)

– I

D

R

DS (ON)

– V

GS

R

DS (ON)

– Ta

Drain–source voltage V

DS

(V) Gate–source voltage V

GS

(V)

Drain current I

D

(mA)

Gate–source voltage V

GS

(V)

Ambient temperature Ta (°C)

Drain current I

D

(mA)

Drain current I

D

(mA)

Drain–source ON-resistance

R

DS (ON)

(Ω)

Drain–source ON-resistance

R

DS (ON)

(Ω)

Drain–source ON-resistance

R

DS (ON)

(Ω)

0

200

121.5 0.5

100

300

400

V

GS

= 1.2 V

1.5 V

1.8 V

Common Source

Ta = 25°C

4 V 10 V 2.5 V

02 31

0.01

1

1000

0.1

10

100

Ta = 100°C

Common Source

V

DS

= 3 V

−25°C

25°C

V

GS

= 1.2 V

0

1

10

100010

5

100

04 108 26

0

10

5

0

10

5

−50 50 1500 100

R

DS (ON)

– V

GS

Gate–source voltage V

GS

(V)

Drain–source ON-resistance

R

DS (ON)

(Ω)

0 4 108 2 6

0

5

10

Common Source

I

D

= 5 mA

1.5 V

Common Source

Ta = 25°C

Common Source

I

D

= 50 mA

Common Source

2.5 V

4 V

Ta = 100°C

25°C

Ta = 100°C

−25°C

2.5 V, 50 mA

4 V, 50 mA

1.5 V, 5 mA

V

GS

= 1.2 V, I

D

= 5 mA

25°C

−25°C

SSM6N35FE,LM

SSM6N35FE,LM

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