2004 Dec 13 3
NXP Semiconductors Product data sheet
NPN medium power transistors
BSR40; BSR41; BSR42;
BSR43
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSR40; BSR41 − 70 V
BSR42; BSR43 − 90 V
V
CEO
collector-emitter voltage open base
BSR40; BSR41 − 60 V
BSR42; BSR43 − 80 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 1 A
I
CM
peak collector current − 2 A
I
BM
peak base current − 0.2 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.35 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 93 K/W
R
th(j-s)
thermal resistance from junction to soldering point 13 K/W
