Silicon
PNP epitaxial planer
Transistors
Features
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Symbol Rating Rating Unit
V
CEO
Collector-Emitter Voltage -100 V
V
CBO
Collector-Base Voltage -100 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current-Continuous -3 A
P
C
Collector Dissipation
T
J
Operating Junction Temperature 150
к
T
STG
Storage Temperature -65 to +150
к
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(I
C
=-30mAdc, I
B
=0)
-100 --- --- Vdc
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=-1mAdc, I
E
=0)
-100 --- --- Vdc
V
(BR)EBO
Emitter-Base Breakdown Voltage
(I
E
=-1mAdc, I
C
=0)
-5 --- --- Vdc
I
CEO
Collector Cutoff Current
(V
CE
=-60Vdc, I
B
=0)
--- --- -50 uAdc
I
EBO
Emitter Cutoff Current
(V
EB
=-5Vdc, I
C
=0)
--- --- -1 mAdc
h
FE
DC Current Gain
V
CE(sat)
Collector-Emitter Saturation Voltage
(
I
C
=-3Adc, I
B
=-0.375Adc) (note 1)
--- ---- -1.2 Vdc
f
T
Transition frequency
(V
CE
=-10Vdc,IC=-0.5Adc,fT=1KHz )
3 --- --- MHZ
Revision:2 2010/11/03
omponents
20736 Marilla Street Chatsworth
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MCC
TM
Micro Commercial Components
www.mccsemi.com
1 of 4
DPACK
DIMENSIONS
INCHES
MM
DIM MIN MAX MIN MAX NOTE
A 0.235 0.245 5.97 6.22
B 0.205 0.215 5.21 5.46
C 0.086 0.094 2.19 2.38
D 0.025 0.035 0.64 0.89
E 0.035 0.045 0.99 1.14
F 0.250 0.265 6.35 6.73
G 0.090 2.28
J 0.018 0.023 0.48 0.58
K 0.020 --- 0.51 ---
S 0.370 0.410 9.40 10.42
V 0.035 0.050 0.88 1.27
D
E
1
2
MJD32C
I
CES
Collector Cutoff Current
(V
CE
=-100Vdc, V
EB
=0)
(I
C
=-3Adc, V
CE
=-4Vdc)
V
BE(on)
Base-Emitter Voltage
(IC=-3Adc, VCE=-4Vdc ) (note 1)
--- --- -1.8 Vdc
PIN 1. BASE
PIN 2. COLLECTOR
PIN 3. EMITTER
• Case Material:Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS
Compliant. See ordering information)
• Electrically similar to popular TIP32 Series
• Designed for general purpose amplifier and low speed switching
applications.
1.25 W
--- --- -20 uAdc
(I
C
=-1Adc, V
CE
=-4Vdc)
25
10
---
50
--- ---
1. Pulse Test: PW≤300µs, Duty Cycle≤2%
Note:
Maximum Thermal Resistance: 100
o
C/W Junction to Ambient
•
