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MMDT5401-7-F

P1-P3P4-P5
MMDT5401
Document Number: DS30169 Rev: 10 - 2
1 of 5
www.diodes.com
April 2013
© Diodes Incorporated
MMDT5401
ADVANCE INFORMATION
150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMDT5551)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound,
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
MMDT5401-7-F K4M 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Device S
y
mbol
SOT363
Top View
Pin-Out
C2
E2
B2
C
1
E1
B1
K4M = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K4M YM
K4M YM
e3
MMDT5401
Document Number: DS30169 Rev: 10 - 2
2 of 5
www.diodes.com
April 2013
© Diodes Incorporated
MMDT5401
ADVANCE INFORMATION
Maximum Ratings
(
@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-160 V
Collector-Emitter Voltage
V
CEO
-150 V
Emitter-Base Voltage
V
EBO
-6 V
Continuous Collector Current
I
C
-200 mA
Thermal Characteristics
(
@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P
D
200
mW
(Notes 6 & 7) 320
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
625
°C/W
(Notes 6 & 7) 390
Thermal Resistance, Junction to Case (Note 8)
R
θJC
140
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(
@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-160
V
I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-150
V
I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6
V
I
E
= -100µA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
-50 nA
V
CB
= -120V, I
E
= 0
-50 µA
V
CB
= -120V, I
E
= 0, T
A
= +100°C
Base-Emitter Cutoff Current
I
EBO
-50 nA
V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 9)
DC Current Gain
h
FE
50

I
C
= -1.0mA, V
CE
= -5.0V
60 240
I
C
= -10mA, V
CE
= -5.0V
50
I
C
= -50mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage
V
CE(sat)
 
-0.2
V
I
C
= -10mA, I
B
= -1.0mA
-0.5
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
 
-1.0 V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo

6.0 pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
fe
40
200
I
C
= -1mA, V
CE
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
100
300 MHz
I
C
= -10mA, V
CE
= -10V, f = 100MHz
Noise Figure NF
8.0 dB
V
CE
= -5.0V, I
C
= -200µA,
R
S
= 10Ω
f = 1.0kHz
Notes: 5. For a device mounted on minimum recommended pad layout 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted 25mm X 25mm 2oz copper.
7. Maximum combined dissipation.
8. Thermal resistance from junction to the top of package.
9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
MMDT5401
Document Number: DS30169 Rev: 10 - 2
3 of 5
www.diodes.com
April 2013
© Diodes Incorporated
MMDT5401
ADVANCE INFORMATION
Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
1
10
100
1,000
10,000
110100
1,000
V = 5V
CE
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 1 Typical DC Current Gain vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0.01
0.1
1.0
10.0
1 10 100 1,000
T = 25°C
A
T = -50°C
A
T = 150°C
A
V , COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
I
C
I
B
= 10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10 100
V , BASE EMI
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
V = 5V
CE
10
100
1,000
1
1
10
100
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
t
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Gain-Bandwidth Product vs Collector Current
C
V = 10V
CE
P1-P3P4-P5

MMDT5401-7-F

Mfr. #:
Buy MMDT5401-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT -150V 200mW
Lifecycle:
New from this manufacturer.
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