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NRVB120ESFT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 4
1 Publication Order Number:
MBR120ESFT1/D
MBR120ESF, NRVB120ESF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
• Guardring for Stress Protection
• Low Leakage
• 150°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• ESD Rating:
♦ Human Body Model = 3B
♦ Machine Model = C
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics
• Device Marking: L2E
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
SOD−123FL
CASE 498
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
http://onsemi.com
L2EMG
G
L2E = Specific Device Code
M = Date Code
G = Pb−Free Package
MARKING DIAGRAM
MBR120ESFT1G SOD−123FL
(Pb−Free)
3,000/
Tape & Reel **
MBR120ESFT3G SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel ***
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
NRVB120ESFT1G SOD−123FL
(Pb−Free)
3,000/
Tape & Reel **
NRVB120ESFT3G SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel ***
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
MBR120ESF, NRVB120ESF
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 140°C)
I
O
1.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
L
= 125°C)
I
FRM
2.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
I
FSM
40
A
Storage Temperature T
stg
−65 to 150 °C
Operating Junction Temperature T
J
−65 to 150 °C
Voltage Rate of Change (Rated V
R
, T
J
= 25°C) dv/dt 10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
R
tjl
R
tjl
R
tja
R
tja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
2
).
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
V
F
T
J
= 25°C T
J
= 100°C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 2.0 A)
0.455
0.530
0.595
0.360
0.455
0.540
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
I
R
T
J
= 25°C T
J
= 100°C mA
(V
R
= 20 V)
(V
R
= 10 V)
(V
R
= 5.0 V)
10
1.0
0.5
1600
500
300
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
MBR120ESF, NRVB120ESF
http://onsemi.com
3
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.2
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
0.1
0.60.4 0.8
T
J
= 100°C
T
J
= 150°C
T
J
= −40°C
T
J
= 25°C
0.2
10
1.0
0.1
0.60.4 0.8
T
J
= 100°C
T
J
= 150°C
T
J
= 25°C
V
R
, REVERSE VOLTAGE (VOLTS)
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
I
R
, REVERSE CURRENT (AMPS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
200
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
10E−6
1E−6
100E−9
10E−9
5.0 10 15
200
100E−3
10E−3
1E−3
100E−9
10E−9
5.0 10 15
T
J
= 150°C
T
J
= 100°C
T
J
= 25°C
T
J
= 150°C
T
J
= 100°C
T
J
= 25°C
100E−6
10E−6
1E−6
100E−6
1E−3
Figure 5. Current Derating Figure 6. Forward Power Dissipation
P
FO
, AVERAGE DISSIPATION (WATTS)
I
pk
/I
o
= 5
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.20
0.7
0.6
0.5
0.3
0.1
0
1.00.4 0.8 1.2 1.6
0.4
SQUARE
WAVE
dc
I
pk
/I
o
= p
I
pk
/I
o
= 10
I
pk
/I
o
= 20
0.6 1.4
0.2
I
O
, AVERAGE FORWARD CURRENT (AMPS)
T
L
, LEAD TEMPERATURE (°C)
4525
1.8
1.2
1.0
0.6
0.2
0
85 105 165
0.8
65 125
0.4
1.4
1.6
I
pk
/I
o
= 20
I
pk
/I
o
= 10
I
pk
/I
o
= 5
I
pk
/I
o
= p
SQUARE
WAVE
dc
freq = 20 kHz
145
P1-P3P4-P5

NRVB120ESFT1G

Mfr. #:
Buy NRVB120ESFT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SCHOTTKY RECT SOD123
Lifecycle:
New from this manufacturer.
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