NCP1000, NCP1001, NCP1002
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4
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Typ Max Unit
POWER SWITCH CIRCUIT
Power Switch Circuit On--State Resistance
NCP1000 (I
D
=50mA)
T
J
=25C
T
J
= 125C(Note8)
NCP1001 (I
D
= 100 mA)
T
J
=25C
T
J
= 125C(Note8)
NCP1002 (I
D
= 150 mA)
T
J
=25C
T
J
= 125C(Note8)
R
(on)
--
--
--
--
--
--
13
24
7.0
14
4.0
8.0
18
36
9.0
18
6.0
12
Ω
Power Switch Circuit Breakdown Voltage
(I
D(off)
= 100 mA, T
J
=25C)
V
(BR)
700 -- -- V
Power Switch Circuit Off--State Leakage Current (V
DS
= 650 V)
T
J
=25C
T
J
=--40C to 125C
I
(off)
--
--
0.25
--
1.0
50
mA
Switching Characteristics (V
DS
=50V,R
L
set for I
D
=0.7I
Iim
)
Turn--on Time (90% to 10%)
Turn--off Time (10% to 90%)
t
on
t
off
--
--
50
50
--
--
ns
CURRENT LIMIT AND THERMAL PROTECTION
Current Limit Threshold (T
J
=25C) (Note 9)
NCP1000
NCP1001
NCP1002
I
lim
0.42
0.84
1.26
0.48
0.96
1.43
0.54
1.08
1.6
A
Current Limit, Peak Switch Current
NCP1000 (di/dt = 100 mA/ms)
NCP1001 (di/dt = 200 mA/ms)
NCP1002 (di/dt = 300 mA/ms)
I
pk
--
--
--
0.500
1.000
1.500
--
--
--
A
Opto Fail--safe Protection (Figure 12)
T
J
=25C
T
J
=0C to 125C
I
Ofail
--
10
18
--
25
35
mA
Propagation Delay, Current Limit Threshold to Power Switch Circuit Output
(Leading Edge Blanking plus Current Limit Delay)
t
PLH
-- 220 -- ns
Thermal Protection (Note 6, 8)
Shutdown (Junction Temperature Increasing)
Hysteresis (Junction Temperature Decreasing)
t
sd
t
H
125
--
140
30
--
--
C
TOTAL DEVICE (Pin 1)
Power Supply Current After UVLO Turn--On
Power Switch Circuit Enabled
NCP1000
NCP1001
NCP1002
Power Switch Circuit Disabled
I
CC1
I
CC2
--
--
--
0.6
1.2
1.4
1.6
1.0
1.6
1.8
2.0
1.25
mA
6. Maximum package power dissipation limits must be observed.
7. Tested junction temperature range for this device series:
T
low
=--40CT
high
= +125C
8. Guaranteed by design only.
9. Actual peak switch current is increased due to the propagation delay time and the di/dt (see Figure 16).
