MBR4035PT C0G

CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 200 V
V
RMS
24 31 35 42 63 70 105 140 V
V
DC
35 45 50 60 90 100 150 200 V
I
F(AV)
A
I
RRM
A
dV/dt V/μs
R
θJC
O
C/W
T
J
O
C
T
STG
O
C
Document Number: DS_D1309031 Version: H13
MBR4035PT thru MBR40200PT
Taiwan Semiconductor
Dual Common Cathode Schottk
y
Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TO-247AD (TO-3P)
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Polarity: As marked
Mounting torque: 10 in-lbs maximum
Weight: 6.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25 unless otherwise noted)
PARAMETER SYMBOL
MBR
4035
PT
MBR
4045
PT
MBR
4050
PT
MBR
4060
PT
MBR
4090
PT
MBR
40100
PT
MBR
40150
PT
MBR
40200
PT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
1
Maximum DC blocking voltage
Maximum average forward rectified current 40
Peak repetitive forward current
(Rated V
R
, Square wave, 20KHz)
I
FRM
40
0.67 0.74
0.80
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
330 A
Peak repetitive reverse surge Current (Note 1) 2
Maximum reverse current @ rated VR T
J
=25
T
J
=125
I
R
1.0
Maximum instantaneous forward voltage (Note 2)
I
F
=20A, T
J
=25
I
F
=20A, T
J
=125
I
F
=40A, T
J
=25
I
F
=40A, T
J
=125
V
F
V
0.75 0.77 0.84
0.65
10,000
--
0.75 - -
1.2
Operating junction temperature range - 55 to + 150
Storage temperature range - 55 to + 150
mA
30 20 10
Voltage rate of change (Rated V
R
)
Note 1: 2.0μs Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
0.90
0.80
1.01
-
0.5 0.1
Typical thermal resistance
PART NO.
PART NO.
MBR4060PT
MBR4060PT
MBR4060PT
(TA=25 unless otherwise noted)
Document Number: DS_D1309031 Version: H13
MBR4035PT thru MBR40200PT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING CODE
GREEN COMPOUND
CODE
PACKAGE PACKING
MBR40xxPT
(Note 1)
Prefix "H" C0 Suffix "G" TO-3P 30 / Tube
Note 1: "xx" defines voltage from 35V (MBR4035PT) to 200V (MBR40200PT)
EXAMPLE
PREFERRED P/N
AEC-Q101
QUALIFIED
PACKING CODE
GREEN COMPOUND
CODE
DESCRIPTION
MBR4060PT C0 C0
MBR4060PT C0G C0 G Green compound
MBR4060PTHC0 H C0 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
10
20
30
40
50
0 50 100 150
AVERAGE FORWARD CURRENT (A)
CASE TEMPERATURE (
o
C)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
0
100
200
300
400
500
600
1 10 100
PEAK FORWARD SURGE CURRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125
TJ=25
MBR4035PT-MBR4045PT
MBR4050PT-MBR40200PT
TJ=75
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
TJ=125
MBR4035PT-MBR4045PT
MBR4050PT-MBR4060PT
MBR4090PT-MBR40100PT
TJ=25
Pulse Width=300μs
1% Duty Cycle
MBR40150PT-40200PT
Min Max Min Max
A 15.90 16.40 0.626 0.646
B 7.90 8.20 0.311 0.323
C 5.70 6.20 0.224 0.244
D 20.80 21.30 0.819 0.839
E 3.50 4.10 0.138 0.161
F 19.70 20.20 0.776 0.795
G - 4.30 - 0.169
H 2.90 3.40 0.114 0.134
I 1.93 2.18 0.076 0.086
J 2.97 3.22 0.117 0.127
K 1.12 1.22 0.044 0.048
L 5.20 5.70 0.205 0.224
M 4.90 5.16 0.193 0.203
N 2.70 3.00 0.106 0.118
O 0.51 0.76 0.020 0.030
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1309031 Version: H13
MARKING DIAGRAM
MBR4035PT thru MBR40200PT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
f=1.0MHz
Vsig=50mVp-p
MBR4035PT-MBR4045PT
MBR4050PT-MBR4060PT
MBR4090PT-MBR40200PT
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (/W)
T-PULSE DURATION (sec)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG

MBR4035PT C0G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
DIODE ARRAY SCHOTTKY 35V TO247AD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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